{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,1,23]],"date-time":"2026-01-23T22:33:42Z","timestamp":1769207622089,"version":"3.49.0"},"reference-count":16,"publisher":"IEEE","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2015,4]]},"DOI":"10.1109\/irps.2015.7112744","type":"proceedings-article","created":{"date-parts":[[2015,6,3]],"date-time":"2015-06-03T15:32:57Z","timestamp":1433345577000},"page":"5B.3.1-5B.3.6","source":"Crossref","is-referenced-by-count":10,"title":["Understanding pulsed-cycling variability and endurance in HfO<inf>x<\/inf> RRAM"],"prefix":"10.1109","author":[{"given":"S.","family":"Balatti","sequence":"first","affiliation":[]},{"given":"S.","family":"Ambrogio","sequence":"additional","affiliation":[]},{"given":"Z.-Q.","family":"Wang","sequence":"additional","affiliation":[]},{"given":"S.","family":"Sills","sequence":"additional","affiliation":[]},{"given":"A.","family":"Calderoni","sequence":"additional","affiliation":[]},{"given":"N.","family":"Ramaswamy","sequence":"additional","affiliation":[]},{"given":"D.","family":"Ielmini","sequence":"additional","affiliation":[]}],"member":"263","reference":[{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/IMW.2014.6849351"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2013.6724732"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2013.2261451"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1063\/1.2959065"},{"key":"ref14","doi-asserted-by":"crossref","first-page":"2378","DOI":"10.1109\/TED.2014.2325531","article-title":"Analytical modeling of oxide-based bipolar resistive memories and complementary resistive switches","volume":"61","author":"ambrogio","year":"2014","journal-title":"IEEE Trans Electron Devices"},{"key":"ref15","first-page":"355","article-title":"Understanding the impact of programming pulses and electrode materials on the endurance properties of scaled Ta2O5 RRAM cells","author":"chen","year":"2014","journal-title":"IEDM"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2012.2199497"},{"key":"ref4","first-page":"460","article-title":"Evidence and solution of over-reset problem for HfOxbased resistive memory with sub-ns switching speed and high endurance","author":"lee","year":"2010","journal-title":"IEDM Tech Dig"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1088\/0957-4484\/22\/48\/485203"},{"key":"ref6","article-title":"A 130.7 mm2 2-Layer 32 Gb ReRAM memory device in 24 nm technology","author":"liu","year":"2013","journal-title":"ISSCC Tech Dig"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1016\/j.sse.2010.11.031"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/VLSIT.2014.6894368"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/ISSCC.2014.6757460"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2012.2218607"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/JPROC.2012.2190369"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2014.7047050"}],"event":{"name":"2015 IEEE International Reliability Physics Symposium (IRPS)","location":"Monterey, CA, USA","start":{"date-parts":[[2015,4,19]]},"end":{"date-parts":[[2015,4,23]]}},"container-title":["2015 IEEE International Reliability Physics Symposium"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/7106273\/7112653\/07112744.pdf?arnumber=7112744","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2017,6,23]],"date-time":"2017-06-23T08:55:04Z","timestamp":1498208104000},"score":1,"resource":{"primary":{"URL":"http:\/\/ieeexplore.ieee.org\/document\/7112744\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2015,4]]},"references-count":16,"URL":"https:\/\/doi.org\/10.1109\/irps.2015.7112744","relation":{},"subject":[],"published":{"date-parts":[[2015,4]]}}}