{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,4,6]],"date-time":"2026-04-06T05:51:27Z","timestamp":1775454687791,"version":"3.50.1"},"reference-count":14,"publisher":"IEEE","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2015,4]]},"DOI":"10.1109\/irps.2015.7112745","type":"proceedings-article","created":{"date-parts":[[2015,6,3]],"date-time":"2015-06-03T19:32:57Z","timestamp":1433359977000},"page":"5B.4.1-5B.4.4","source":"Crossref","is-referenced-by-count":7,"title":["A new prediction method for ReRAM data retention statistics based on 3D filament structures"],"prefix":"10.1109","author":[{"given":"Z.","family":"Wei","sequence":"first","affiliation":[]},{"given":"K.","family":"Katayama","sequence":"additional","affiliation":[]},{"given":"S.","family":"Muraoka","sequence":"additional","affiliation":[]},{"given":"R.","family":"Yasuhara","sequence":"additional","affiliation":[]},{"given":"T.","family":"Mikawa","sequence":"additional","affiliation":[]},{"given":"K.","family":"Eriguchi","sequence":"additional","affiliation":[]}],"member":"263","reference":[{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1149\/2.0011412ssl"},{"key":"ref11","first-page":"113","author":"bottger","year":"1985","journal-title":"Hopping Conduction in solids Verlags-gesellschaft Weinheim Germany"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevE.72.016121"},{"key":"ref13","year":"2007","journal-title":"JCPDS-ICDD File No 25-0922"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1063\/1.4893325"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.7567\/JJAP.52.114201"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1063\/1.3524521"},{"key":"ref6","article-title":"Panasonic Starts World's First Mass Production of ReRAM Mounted Microcomputers","year":"2013"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/TNS.2014.2361488"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2011.6131650"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/VLSIT.2014.6894368"},{"key":"ref2","first-page":"293","article-title":"Highly reliable Tat), ReRAM and direct evidence of redox reaction mechanism","author":"wei","year":"2008","journal-title":"IEEE International Electron Device Meeting"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2012.2215121"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2014.2329020"}],"event":{"name":"2015 IEEE International Reliability Physics Symposium (IRPS)","location":"Monterey, CA, USA","start":{"date-parts":[[2015,4,19]]},"end":{"date-parts":[[2015,4,23]]}},"container-title":["2015 IEEE International Reliability Physics Symposium"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/7106273\/7112653\/07112745.pdf?arnumber=7112745","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2017,3,24]],"date-time":"2017-03-24T20:46:03Z","timestamp":1490388363000},"score":1,"resource":{"primary":{"URL":"http:\/\/ieeexplore.ieee.org\/document\/7112745\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2015,4]]},"references-count":14,"URL":"https:\/\/doi.org\/10.1109\/irps.2015.7112745","relation":{},"subject":[],"published":{"date-parts":[[2015,4]]}}}