{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,10,27]],"date-time":"2025-10-27T10:46:30Z","timestamp":1761561990931},"reference-count":15,"publisher":"IEEE","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2015,4]]},"DOI":"10.1109\/irps.2015.7112756","type":"proceedings-article","created":{"date-parts":[[2015,6,3]],"date-time":"2015-06-03T19:32:57Z","timestamp":1433359977000},"page":"6A.2.1-6A.2.5","source":"Crossref","is-referenced-by-count":4,"title":["Long-term data for BTI degradation in 32nm IBM microprocessor using HKMG technology"],"prefix":"10.1109","author":[{"given":"Pong-Fei","family":"Lu","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Keith A.","family":"Jenkins","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"K. Paul","family":"Muller","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Ralf","family":"Schaufler","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/MM.2013.9"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2013.2284647"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1109\/TVLSI.2014.2339364"},{"key":"ref13","article-title":"On-chip circuit to monitor NBTI and PBTI degradation","author":"jenkins","year":"0","journal-title":"ESREF 2013"},{"key":"ref14","first-page":"140","article-title":"High-performance 32nm SOI CMOS with high-k\/metal gate and 0.149u2m SRAM and ultra low-k back end with eleven levels of copper","author":"greene","year":"2009","journal-title":"VLSI Symp Tech Digest"},{"year":"0","key":"ref15"},{"key":"ref4","first-page":"1","article-title":"Improving and optimizing reliability in future technologies with high-k dielectrics","author":"linder","year":"2013","journal-title":"VLSI-TSA"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS.2010.5488679"},{"key":"ref6","first-page":"5a.1.1","article-title":"Bias temperature instability in high-k\/metal gate transistors - gate stack scaling tends","author":"krishnan","year":"2012","journal-title":"IRPS"},{"key":"ref5","article-title":"Bum-in stress induced degradation and post-burn-in high temperature anneal (bake) effects in adviced HKMG and Oxynitride based CMOS ring oscillators","author":"lannou","year":"2012","journal-title":"5C 2 1–5C 2 5 International Reliability Physics Symposium"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS.2011.5784559"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS.2009.5173404"},{"key":"ref2","first-page":"18.4.1","article-title":"Fundamental aspects of Hf02-based high-k metal gate stack reliability and implications on \\mathrm{t}_{\\mathrm{inv}}-scaling","author":"cartier","year":"2011","journal-title":"IEDM"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/TDMR.2009.2016954"},{"key":"ref9","first-page":"4a.1.1","article-title":"A built-in BTI monitor for long-term data collection in IBM microprocessors","author":"lu","year":"2013","journal-title":"IRPS"}],"event":{"name":"2015 IEEE International Reliability Physics Symposium (IRPS)","start":{"date-parts":[[2015,4,19]]},"location":"Monterey, CA, USA","end":{"date-parts":[[2015,4,23]]}},"container-title":["2015 IEEE International Reliability Physics Symposium"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/7106273\/7112653\/07112756.pdf?arnumber=7112756","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2017,3,24]],"date-time":"2017-03-24T19:07:23Z","timestamp":1490382443000},"score":1,"resource":{"primary":{"URL":"http:\/\/ieeexplore.ieee.org\/document\/7112756\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2015,4]]},"references-count":15,"URL":"https:\/\/doi.org\/10.1109\/irps.2015.7112756","relation":{},"subject":[],"published":{"date-parts":[[2015,4]]}}}