{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,9,7]],"date-time":"2024-09-07T18:03:13Z","timestamp":1725732193923},"reference-count":26,"publisher":"IEEE","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2018,3]]},"DOI":"10.1109\/irps.2018.8353581","type":"proceedings-article","created":{"date-parts":[[2018,5,8]],"date-time":"2018-05-08T21:16:55Z","timestamp":1525814215000},"page":"4B.4-1-4B.4-9","source":"Crossref","is-referenced-by-count":3,"title":["Comprehensive study into underlying mechanisms of anomalous gate leakage degradation in GaN high electron mobility transistors"],"prefix":"10.1109","author":[{"given":"K.","family":"Mukherjee","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"F.","family":"Darracq","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"A.","family":"Curutchet","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"N.","family":"Malbert","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"N.","family":"Labat","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1016\/j.tsf.2016.06.003"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1016\/j.microrel.2009.07.003"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2013.2284285"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1016\/j.microrel.2013.07.095"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1109\/ICNF.2015.7288607"},{"key":"ref15","article-title":"Contribution à l'assurance fiabilité de filières HEMTs à base de GaN sur substrat SiC: caractérisation électrique approfondie et modélisaton des effets parasites","author":"brunel","year":"2013","journal-title":"98 Bordeaux University"},{"journal-title":"Synopsys","article-title":"Sentaurus Device User Guide","year":"2007","key":"ref16"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1109\/SISPAD.2014.6931572"},{"key":"ref18","doi-asserted-by":"publisher","DOI":"10.1016\/j.microrel.2017.07.049"},{"key":"ref19","doi-asserted-by":"publisher","DOI":"10.1063\/1.3592801"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2011.2160547"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1149\/2.0211604jss"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2008.924437"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2013.2279021"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.3390\/ma5122498"},{"key":"ref7","first-page":"236","article-title":"Investigation of gate and drain leakage currents of AlGaN\/GaN HEMTs at subthreshold regime for temperature range 300K-400K","author":"rzin","year":"0","journal-title":"Proc 2013 European Microwave Integrated Circuits Coference"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS.2015.7112786"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1149\/2.0031711jss"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2013.2293114"},{"key":"ref20","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS.2017.7936282"},{"key":"ref22","doi-asserted-by":"publisher","DOI":"10.1016\/j.microrel.2014.09.013"},{"key":"ref21","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2016.2535133"},{"key":"ref24","doi-asserted-by":"publisher","DOI":"10.1063\/1.1762980"},{"key":"ref23","doi-asserted-by":"publisher","DOI":"10.1116\/1.3139882"},{"key":"ref26","doi-asserted-by":"publisher","DOI":"10.1109\/16.906451"},{"key":"ref25","doi-asserted-by":"publisher","DOI":"10.1063\/1.371866"}],"event":{"name":"2018 IEEE International Reliability Physics Symposium (IRPS)","start":{"date-parts":[[2018,3,11]]},"location":"Burlingame, CA","end":{"date-parts":[[2018,3,15]]}},"container-title":["2018 IEEE International Reliability Physics Symposium (IRPS)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/8345372\/8353529\/08353581.pdf?arnumber=8353581","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2018,6,1]],"date-time":"2018-06-01T18:55:55Z","timestamp":1527879355000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/8353581\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2018,3]]},"references-count":26,"URL":"https:\/\/doi.org\/10.1109\/irps.2018.8353581","relation":{},"subject":[],"published":{"date-parts":[[2018,3]]}}}