{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,2,23]],"date-time":"2026-02-23T11:34:39Z","timestamp":1771846479453,"version":"3.50.1"},"reference-count":7,"publisher":"IEEE","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2018,3]]},"DOI":"10.1109\/irps.2018.8353582","type":"proceedings-article","created":{"date-parts":[[2018,5,8]],"date-time":"2018-05-08T21:16:55Z","timestamp":1525814215000},"page":"4B.5-1-4B.5-4","source":"Crossref","is-referenced-by-count":52,"title":["On the origin of the leakage current in p-gate AlGaN\/GaN HEMTs"],"prefix":"10.1109","author":[{"given":"A.","family":"Stockman","sequence":"first","affiliation":[]},{"given":"E.","family":"Canato","sequence":"additional","affiliation":[]},{"given":"A.","family":"Tajalli","sequence":"additional","affiliation":[]},{"given":"M.","family":"Meneghini","sequence":"additional","affiliation":[]},{"given":"G.","family":"Meneghesso","sequence":"additional","affiliation":[]},{"given":"E.","family":"Zanoni","sequence":"additional","affiliation":[]},{"given":"P.","family":"Moens","sequence":"additional","affiliation":[]},{"given":"B.","family":"Bakeroot","sequence":"additional","affiliation":[]}],"member":"263","reference":[{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1063\/1.4773244"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2016.2631640"},{"key":"ref6","doi-asserted-by":"crossref","DOI":"10.3390\/en10020153","article-title":"Technology and reliability of normally-off GaN HEMTs with p-type gate","volume":"10","author":"meneghini","year":"2017","journal-title":"Energies"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2017.2773269"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2017.2769167"},{"key":"ref2","first-page":"130","article-title":"Temperature dependent substrate trapping in AlGaN\/GaN power devices and the impact on dynamic $\\mathrm{R}_{\\mathrm{o}\\mathrm{n}}$","author":"stockman","year":"2017","journal-title":"IEEE ESSDERC"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/ISPSD.2016.7520786"}],"event":{"name":"2018 IEEE International Reliability Physics Symposium (IRPS)","location":"Burlingame, CA","start":{"date-parts":[[2018,3,11]]},"end":{"date-parts":[[2018,3,15]]}},"container-title":["2018 IEEE International Reliability Physics Symposium (IRPS)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/8345372\/8353529\/08353582.pdf?arnumber=8353582","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2022,1,26]],"date-time":"2022-01-26T05:03:02Z","timestamp":1643173382000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/8353582\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2018,3]]},"references-count":7,"URL":"https:\/\/doi.org\/10.1109\/irps.2018.8353582","relation":{},"subject":[],"published":{"date-parts":[[2018,3]]}}}