{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,6,4]],"date-time":"2026-06-04T17:15:30Z","timestamp":1780593330111,"version":"3.54.1"},"reference-count":8,"publisher":"IEEE","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2018,3]]},"DOI":"10.1109\/irps.2018.8353583","type":"proceedings-article","created":{"date-parts":[[2018,5,8]],"date-time":"2018-05-08T17:16:55Z","timestamp":1525799815000},"page":"4C.1-1-4C.1-4","source":"Crossref","is-referenced-by-count":59,"title":["Scaling trends and bias dependence of the soft error rate of 16 nm and 7 nm FinFET SRAMs"],"prefix":"10.1109","author":[{"given":"Balaji","family":"Narasimham","sequence":"first","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Saket","family":"Gupta","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Dan","family":"Reed","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"J. K.","family":"Wang","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Nick","family":"Hendrickson","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Hasan","family":"Taufique","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"263","reference":[{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/TNS.2015.2498927"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/TNS.2015.2495130"},{"key":"ref6","first-page":"238","article-title":"A 16nm 128Mb SRAM in High-k Metal-Gate FinFET Technology with Write-Assist Circuitry for Low-Vmin Applications","author":"chen","year":"2014","journal-title":"IEEE Int Solid-State Cir Conf"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/TDMR.2016.2535663"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/23.903813"},{"key":"ref7","year":"2013","journal-title":"International Technology Roadmap for Semiconductors"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS.2015.7112728"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/TNS.2012.2218128"}],"event":{"name":"2018 IEEE International Reliability Physics Symposium (IRPS)","location":"Burlingame, CA","start":{"date-parts":[[2018,3,11]]},"end":{"date-parts":[[2018,3,15]]}},"container-title":["2018 IEEE International Reliability Physics Symposium (IRPS)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/8345372\/8353529\/08353583.pdf?arnumber=8353583","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2018,6,1]],"date-time":"2018-06-01T16:21:26Z","timestamp":1527870086000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/8353583\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2018,3]]},"references-count":8,"URL":"https:\/\/doi.org\/10.1109\/irps.2018.8353583","relation":{},"subject":[],"published":{"date-parts":[[2018,3]]}}}