{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,5,16]],"date-time":"2026-05-16T16:05:49Z","timestamp":1778947549426,"version":"3.51.4"},"reference-count":29,"publisher":"IEEE","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2018,3]]},"DOI":"10.1109\/irps.2018.8353591","type":"proceedings-article","created":{"date-parts":[[2018,5,8]],"date-time":"2018-05-08T21:16:55Z","timestamp":1525814215000},"page":"4D.4-1-4D.4-7","source":"Crossref","is-referenced-by-count":18,"title":["Fine pitch 3D interconnections with hybrid bonding technology: From process robustness to reliability"],"prefix":"10.1109","author":[{"given":"L.","family":"Arnaud","sequence":"first","affiliation":[]},{"given":"S.","family":"Moreau","sequence":"additional","affiliation":[]},{"given":"A.","family":"Jouve","sequence":"additional","affiliation":[]},{"given":"I.","family":"Jani","sequence":"additional","affiliation":[]},{"given":"D.","family":"Lattard","sequence":"additional","affiliation":[]},{"given":"F.","family":"Fournel","sequence":"additional","affiliation":[]},{"given":"C.","family":"Euvrard","sequence":"additional","affiliation":[]},{"given":"Y.","family":"Exbrayat","sequence":"additional","affiliation":[]},{"given":"V.","family":"Balan","sequence":"additional","affiliation":[]},{"given":"N.","family":"Bresson","sequence":"additional","affiliation":[]},{"given":"S.","family":"Lhostis","sequence":"additional","affiliation":[]},{"given":"J.","family":"Jourdon","sequence":"additional","affiliation":[]},{"given":"E.","family":"Deloffre","sequence":"additional","affiliation":[]},{"given":"S.","family":"Guillaumet","sequence":"additional","affiliation":[]},{"given":"A.","family":"Farcy","sequence":"additional","affiliation":[]},{"given":"S.","family":"Gousseau","sequence":"additional","affiliation":[]},{"given":"M.","family":"Arnoux","sequence":"additional","affiliation":[]}],"member":"263","reference":[{"key":"ref10","first-page":"869","article-title":"Reliable 300mm Wafer Level Hybrid Bonding for 3D Stacked CMOS Image Sensors","author":"lhostis","year":"0","journal-title":"Proc 2016 IEEE Electronic Components and Technology Conference"},{"key":"ref11","first-page":"177","article-title":"CMP Pprocess Optimization for Bonding Applications","author":"balan","year":"0","journal-title":"Proc Int Conf on Planarization\/CMP Tech 2012"},{"key":"ref12","article-title":"Challenges in Nanotopography measurements at die level","author":"beitia","year":"2017","journal-title":"Proc Int Conf Frontiers Characterization Metrology Nanoelectron"},{"key":"ref13","article-title":"Chase of Nanometer Topography in CMP for 3D Integration","author":"euvrard","year":"0","journal-title":"Proc 2017 International Conference on Planarization\/CMP Technolog"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1007\/s00542-017-3527-1"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1149\/2.0031505jss"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1016\/j.tsf.2012.02.056"},{"key":"ref17","first-page":"229","article-title":"Copper-Copper direct bonding: Impact of Grain Size","author":"goncharton","year":"0","journal-title":"Proc 2015 IEEE IITC Conf"},{"key":"ref18","doi-asserted-by":"publisher","DOI":"10.1016\/j.ijsolstr.2016.02.041"},{"key":"ref19","article-title":"Cu\/SiO2 Hybrid Bonding: Finite element Modelling and Experimental Characterization","author":"sart","year":"0","journal-title":"2016 Electronic System-Integration Technology Conference"},{"key":"ref28","doi-asserted-by":"publisher","DOI":"10.1109\/ECTC.2016.27"},{"key":"ref4","article-title":"2011-2022 Market Forecast for 3D imaging and sensing device","year":"2017","journal-title":"Yole Development Report"},{"key":"ref27","article-title":"Electromigration in Hybrid Bonding Interconnect for 3DIC: Impact of the diffusion barrier","author":"moreau","year":"0","journal-title":"Proc 2016 IEEE Electronics Packaging Technology Conference"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2017.8268316"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2016.7838375"},{"key":"ref29","article-title":"Reliability of Hybrid Bonding Interconnects","author":"gambino","year":"0","journal-title":"Proc 2017 IEEE-International Interconnect Technology Conference"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/ECTC.2001.927858"},{"key":"ref8","article-title":"1?m pitch direct hybrid bonding with < 300nm wafer to wafer overlay accuracy","author":"jouve","year":"0","journal-title":"Proc 2017 S3S Conference"},{"key":"ref7","first-page":"729","article-title":"Scalable, sub 2?m pitch, Cu\/SiCN to Cu\/SiCN Hybrid Wafer to wafer Bonding Technology","author":"beyne","year":"0","journal-title":"Proc 2017 IEEE International Electron Devices Meeting"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1149\/1.3577596"},{"key":"ref9","first-page":"1","article-title":"< 200nm Wafer -to-Wafer Overlay Accuracy in wafer Level Cu\/SiO2 Hybrid Bonding for BSI CIS","author":"rebhan","year":"0","journal-title":"Proc 2015 IEEE Electronics Packaging Technology Conference"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2015.7409655"},{"key":"ref20","article-title":"Non destructive control of direct bonding","author":"dekious","year":"0","journal-title":"2016 Physical Acoustic Conference"},{"key":"ref22","doi-asserted-by":"publisher","DOI":"10.1109\/ECTC.2010.5490904"},{"key":"ref21","doi-asserted-by":"publisher","DOI":"10.1109\/ECTC.2016.205"},{"key":"ref24","article-title":"IEEE 1687 BISTS for Post-Bond Test and Electrical Analysis of High Density 3D Interconnect defects","author":"jani","year":"0","journal-title":"unpublished submitted in IEEE-2018 European Test Symposium"},{"key":"ref23","doi-asserted-by":"publisher","DOI":"10.1109\/NEWCAS.2017.8010128"},{"key":"ref26","first-page":"3e21","article-title":"Mass transport induced failure in direct copper (Cu) bonding interconnect for 3D Integration","author":"moreau","year":"0","journal-title":"Proceedings of IEEE Reliability Physics Symposium 2014 IEEE International"},{"key":"ref25","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2011.6131502"}],"event":{"name":"2018 IEEE International Reliability Physics Symposium (IRPS)","location":"Burlingame, CA","start":{"date-parts":[[2018,3,11]]},"end":{"date-parts":[[2018,3,15]]}},"container-title":["2018 IEEE International Reliability Physics Symposium (IRPS)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/8345372\/8353529\/08353591.pdf?arnumber=8353591","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2018,6,1]],"date-time":"2018-06-01T18:55:38Z","timestamp":1527879338000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/8353591\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2018,3]]},"references-count":29,"URL":"https:\/\/doi.org\/10.1109\/irps.2018.8353591","relation":{},"subject":[],"published":{"date-parts":[[2018,3]]}}}