{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,4,4]],"date-time":"2026-04-04T17:46:47Z","timestamp":1775324807013,"version":"3.50.1"},"reference-count":10,"publisher":"IEEE","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2018,3]]},"DOI":"10.1109\/irps.2018.8353594","type":"proceedings-article","created":{"date-parts":[[2018,5,8]],"date-time":"2018-05-08T21:16:55Z","timestamp":1525814215000},"page":"4E.2-1-4E.2-7","source":"Crossref","is-referenced-by-count":31,"title":["Lifetime evaluation for Hybrid-Drain-embedded Gate Injection Transistor (HD-GIT) under practical switching operations"],"prefix":"10.1109","author":[{"given":"Ayanori","family":"Ikoshi","sequence":"first","affiliation":[]},{"given":"Masahiro","family":"Toki","sequence":"additional","affiliation":[]},{"given":"Hiroto","family":"Yamagiwa","sequence":"additional","affiliation":[]},{"given":"Daijiro","family":"Arisawa","sequence":"additional","affiliation":[]},{"given":"Masahiro","family":"Hikita","sequence":"additional","affiliation":[]},{"given":"Kazuki","family":"Suzuki","sequence":"additional","affiliation":[]},{"given":"Manabu","family":"Yanagihara","sequence":"additional","affiliation":[]},{"given":"Yasuhiro","family":"Uemoto","sequence":"additional","affiliation":[]},{"given":"Kenichiro","family":"Tanaka","sequence":"additional","affiliation":[]},{"given":"Tetsuzo","family":"Ueda","sequence":"additional","affiliation":[]}],"member":"263","reference":[{"key":"ref4","volume":"107","author":"tanaka","year":"2015","journal-title":"Appl Phys Lett"},{"key":"ref3","volume":"41","author":"kaneko","year":"2015","journal-title":"IEEE Int Symp Power Semiconductor Devices and ICs (ISPSD)"},{"key":"ref10","volume":"54","author":"uemoto","year":"2007","journal-title":"IEEE Trans Electro Dev"},{"key":"ref6","doi-asserted-by":"crossref","DOI":"10.1109\/16.906437","volume":"48","author":"binari","year":"2001","journal-title":"IEEE Trans Electron Devices"},{"key":"ref5","volume":"23","author":"okita","year":"2016","journal-title":"IEEE Int Symp Power Semiconductor Devices and ICs (ISPSD)"},{"key":"ref8","volume":"100","author":"meneghini","year":"2012","journal-title":"Appl Phys Lett"},{"key":"ref7","year":"0","journal-title":"JEDEC standard JC-70 Wide Bandgap Power Electronic Conversion Semiconductors"},{"key":"ref2","volume":"4b 2","author":"tanaka","year":"2017","journal-title":"IEEE International Reliability Physics Symposium (IRPS)"},{"key":"ref9","doi-asserted-by":"crossref","DOI":"10.1109\/LED.2011.2181815","volume":"33","author":"meneghini","year":"2012","journal-title":"IEEE Electron Dev Lett"},{"key":"ref1","volume":"4a 3","author":"bahl","year":"2016","journal-title":"IEEE International Reliability Physics Symposium (IRPS)"}],"event":{"name":"2018 IEEE International Reliability Physics Symposium (IRPS)","location":"Burlingame, CA","start":{"date-parts":[[2018,3,11]]},"end":{"date-parts":[[2018,3,15]]}},"container-title":["2018 IEEE International Reliability Physics Symposium (IRPS)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/8345372\/8353529\/08353594.pdf?arnumber=8353594","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2018,6,1]],"date-time":"2018-06-01T20:21:24Z","timestamp":1527884484000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/8353594\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2018,3]]},"references-count":10,"URL":"https:\/\/doi.org\/10.1109\/irps.2018.8353594","relation":{},"subject":[],"published":{"date-parts":[[2018,3]]}}}