{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,9,7]],"date-time":"2024-09-07T13:24:11Z","timestamp":1725715451383},"reference-count":18,"publisher":"IEEE","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2018,3]]},"DOI":"10.1109\/irps.2018.8353632","type":"proceedings-article","created":{"date-parts":[[2018,5,8]],"date-time":"2018-05-08T21:16:55Z","timestamp":1525814215000},"page":"6D.1-1-6D.1-5","source":"Crossref","is-referenced-by-count":3,"title":["Investigation of data pattern effects on nitride charge lateral migration in a charge trap flash memory by using a random telegraph signal method"],"prefix":"10.1109","author":[{"given":"Y. H.","family":"Liu","sequence":"first","affiliation":[],"role":[{"role":"author","vocab":"crossref"}]},{"given":"H. Y.","family":"Lin","sequence":"additional","affiliation":[],"role":[{"role":"author","vocab":"crossref"}]},{"given":"C. M.","family":"Jiang","sequence":"additional","affiliation":[],"role":[{"role":"author","vocab":"crossref"}]},{"given":"Tahui","family":"Wang","sequence":"additional","affiliation":[],"role":[{"role":"author","vocab":"crossref"}]},{"given":"W. J.","family":"Tsai","sequence":"additional","affiliation":[],"role":[{"role":"author","vocab":"crossref"}]},{"given":"T. C.","family":"Lu","sequence":"additional","affiliation":[],"role":[{"role":"author","vocab":"crossref"}]},{"given":"K. C.","family":"Chen","sequence":"additional","affiliation":[],"role":[{"role":"author","vocab":"crossref"}]},{"given":"Chih-Yuan","family":"Lu","sequence":"additional","affiliation":[],"role":[{"role":"author","vocab":"crossref"}]}],"member":"263","reference":[{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2010.2098410"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2004.833824"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2016.2633545"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2001.979614"},{"journal-title":"Physics of Semiconductors Devices","year":"1981","author":"sze","key":"ref14"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1016\/j.sse.2008.04.016"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1134\/S1063783407090041"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2009.2026113"},{"key":"ref18","doi-asserted-by":"publisher","DOI":"10.1002\/9780470017944.ch6"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1016\/j.microrel.2014.07.070"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/RELPHY.2002.996607"},{"key":"ref6","first-page":"78","article-title":"Comprehensive evaluation of early retention (fast charge loss within a few seconds) characteristics in tube-type 3-D NAND Flash Memory","author":"choil","year":"2016","journal-title":"VLSI Symp Tech"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/VLSIT.2015.7223670"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1063\/1.4994321"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/55.46938"},{"key":"ref2","first-page":"192","article-title":"Vertical cell array using TCAT(terabit cell array transistor) technology for ultra high density NAND flash memory","author":"jang","year":"2009","journal-title":"VLSI Symp Tech"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/VLSIT.2007.4339708"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/16.701482"}],"event":{"name":"2018 IEEE International Reliability Physics Symposium (IRPS)","start":{"date-parts":[[2018,3,11]]},"location":"Burlingame, CA","end":{"date-parts":[[2018,3,15]]}},"container-title":["2018 IEEE International Reliability Physics Symposium (IRPS)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/8345372\/8353529\/08353632.pdf?arnumber=8353632","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2018,6,1]],"date-time":"2018-06-01T18:55:38Z","timestamp":1527879338000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/8353632\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2018,3]]},"references-count":18,"URL":"https:\/\/doi.org\/10.1109\/irps.2018.8353632","relation":{},"subject":[],"published":{"date-parts":[[2018,3]]}}}