{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,9,8]],"date-time":"2024-09-08T06:01:07Z","timestamp":1725775267568},"reference-count":26,"publisher":"IEEE","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2018,3]]},"DOI":"10.1109\/irps.2018.8353650","type":"proceedings-article","created":{"date-parts":[[2018,5,8]],"date-time":"2018-05-08T21:16:55Z","timestamp":1525814215000},"page":"6F.6-1-6F.6-7","source":"Crossref","is-referenced-by-count":9,"title":["Bottom-up methodology for predictive simulations of self-heating in aggressively scaled process technologies"],"prefix":"10.1109","author":[{"given":"D.","family":"Singh","sequence":"first","affiliation":[]},{"given":"O. D.","family":"Restrepo","sequence":"additional","affiliation":[]},{"given":"P. P.","family":"Manik","sequence":"additional","affiliation":[]},{"given":"N. Rao","family":"Mavilla","sequence":"additional","affiliation":[]},{"given":"H.","family":"Zhang","sequence":"additional","affiliation":[]},{"given":"P.","family":"Paliwoda","sequence":"additional","affiliation":[]},{"given":"S.","family":"Pinkett","sequence":"additional","affiliation":[]},{"given":"Y.","family":"Deng","sequence":"additional","affiliation":[]},{"given":"E. Cruz","family":"Silva","sequence":"additional","affiliation":[]},{"given":"J. B.","family":"Johnson","sequence":"additional","affiliation":[]},{"given":"M.","family":"Bajaj","sequence":"additional","affiliation":[]},{"given":"S.","family":"Furkay","sequence":"additional","affiliation":[]},{"given":"Z.","family":"Chbili","sequence":"additional","affiliation":[]},{"given":"A.","family":"Kerber","sequence":"additional","affiliation":[]},{"given":"C.","family":"Christiansen","sequence":"additional","affiliation":[]},{"given":"S.","family":"Narasimha","sequence":"additional","affiliation":[]},{"given":"E.","family":"Maciejewski","sequence":"additional","affiliation":[]},{"given":"S.","family":"Samavedam","sequence":"additional","affiliation":[]},{"given":"C.-H.","family":"Lin","sequence":"additional","affiliation":[]}],"member":"263","reference":[{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS.2017.7936263"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2015.7409740"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.81.085205"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1063\/1.1616981"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1080\/00018735200101151"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.108.255901"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1063\/1.2089178"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1063\/1.119402"},{"key":"ref18","doi-asserted-by":"publisher","DOI":"10.1063\/1.1524305"},{"key":"ref19","doi-asserted-by":"publisher","DOI":"10.1063\/1.2133890"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2016.7838425"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS.2013.6532036"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2002.1175793"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS.2017.7936278"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/TDMR.2018.2818930"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS.2014.6860642"},{"key":"ref2","doi-asserted-by":"crossref","first-page":"11.6.1","DOI":"10.1109\/IEDM.2015.7409678","article-title":"Self-heating on bulk FinFET from 14nm down to 7nm node","author":"jang","year":"2015","journal-title":"IEEE Int Electron Devices Meeting (IEDM)"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.23919\/VLSIT.2017.7998154"},{"key":"ref1","first-page":"248t","article-title":"Experimental analysis and modeling of self heating effect in dielectric isolated planar and fin devices","author":"lee","year":"2013","journal-title":"2013 Symposium on VLSI Technology VLSIT"},{"key":"ref20","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2017.8268476"},{"journal-title":"QuantumWise A\/S","article-title":"Atomistic Toolkit version 2016.2","year":"0","key":"ref22"},{"key":"ref21","article-title":"A 10nm High Performance and Low-Power CMOS Technology Featuring 3rd Generation FinFET Transistors, Self-Aligned Quad Patterning, Contact over Active Gate and Cobalt Local Interconnects","author":"auth","year":"2017","journal-title":"IEDM"},{"journal-title":"Introduction to Solid State Physics","year":"2005","author":"kittel","key":"ref24"},{"key":"ref23","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.65.165401"},{"key":"ref26","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2014.7046977"},{"key":"ref25","doi-asserted-by":"publisher","DOI":"10.1109\/SISPAD.2002.1034558"}],"event":{"name":"2018 IEEE International Reliability Physics Symposium (IRPS)","start":{"date-parts":[[2018,3,11]]},"location":"Burlingame, CA","end":{"date-parts":[[2018,3,15]]}},"container-title":["2018 IEEE International Reliability Physics Symposium (IRPS)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/8345372\/8353529\/08353650.pdf?arnumber=8353650","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2019,10,17]],"date-time":"2019-10-17T19:08:28Z","timestamp":1571339308000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/8353650\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2018,3]]},"references-count":26,"URL":"https:\/\/doi.org\/10.1109\/irps.2018.8353650","relation":{},"subject":[],"published":{"date-parts":[[2018,3]]}}}