{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,7,27]],"date-time":"2025-07-27T07:27:17Z","timestamp":1753601237072},"reference-count":7,"publisher":"IEEE","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2018,3]]},"DOI":"10.1109\/irps.2018.8353677","type":"proceedings-article","created":{"date-parts":[[2018,5,8]],"date-time":"2018-05-08T21:16:55Z","timestamp":1525814215000},"page":"P-MY.4-1-P-MY.4-5","source":"Crossref","is-referenced-by-count":6,"title":["Suppression of endurance-stressed data-retention failures of 40nm TaOx-based ReRAM"],"prefix":"10.1109","author":[{"given":"Shouhei","family":"Fukuyama","sequence":"first","affiliation":[]},{"given":"Kazuki","family":"Maeda","sequence":"additional","affiliation":[]},{"given":"Shinpei","family":"Matsuda","sequence":"additional","affiliation":[]},{"given":"Ken","family":"Takeuchi","sequence":"additional","affiliation":[]},{"given":"Ryutaro","family":"Yasuhara","sequence":"additional","affiliation":[]}],"member":"263","reference":[{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2013.2248157"},{"key":"ref3","doi-asserted-by":"crossref","first-page":"5a?4.1","DOI":"10.1109\/IRPS.2017.7936321","article-title":"Error recovery of low resistance state in 40nm TaOx-bascd ReRAM","author":"maeda","year":"2017","journal-title":"2017 IEEE International Reliability Physics Symposium (IRPS)"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/IMW.2017.7939101"},{"key":"ref5","first-page":"62t","article-title":"Comprehensive understanding of conductive filament characteristics and retention properties for highly reliable ReRAM","author":"muraoka","year":"2013","journal-title":"2013 Symposium on VLSI Technology VLSIT"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/IMW.2017.7939077"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2008.4796676"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.7567\/SSDM.2008.J-9-3"}],"event":{"name":"2018 IEEE International Reliability Physics Symposium (IRPS)","start":{"date-parts":[[2018,3,11]]},"location":"Burlingame, CA","end":{"date-parts":[[2018,3,15]]}},"container-title":["2018 IEEE International Reliability Physics Symposium (IRPS)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/8345372\/8353529\/08353677.pdf?arnumber=8353677","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2018,6,1]],"date-time":"2018-06-01T18:56:00Z","timestamp":1527879360000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/8353677\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2018,3]]},"references-count":7,"URL":"https:\/\/doi.org\/10.1109\/irps.2018.8353677","relation":{},"subject":[],"published":{"date-parts":[[2018,3]]}}}