{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,11,11]],"date-time":"2025-11-11T13:23:43Z","timestamp":1762867423575,"version":"3.28.0"},"reference-count":19,"publisher":"IEEE","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2018,3]]},"DOI":"10.1109\/irps.2018.8353696","type":"proceedings-article","created":{"date-parts":[[2018,5,8]],"date-time":"2018-05-08T17:16:55Z","timestamp":1525799815000},"page":"P-TX.1-1-P-TX.1-5","source":"Crossref","is-referenced-by-count":2,"title":["Low frequency noise in MOS&lt;inf&gt;2&lt;\/inf&gt; negative capacitance field-effect transistor"],"prefix":"10.1109","author":[{"given":"Sami","family":"Alghamdi","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Mengwei","family":"Si","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Lingming","family":"Yang","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Peide D.","family":"Ye","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2017.8268395"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1039\/C7NR00088J"},{"key":"ref12","doi-asserted-by":"crossref","first-page":"147","DOI":"10.1038\/nnano.2010.279","article-title":"Single-layer MoS2 transistors","volume":"6","author":"radisavljevic","year":"2011","journal-title":"Nature Nanotech"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1126\/science.aah4698"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2011.2169676"},{"key":"ref15","doi-asserted-by":"crossref","DOI":"10.1007\/978-1-4020-5910-0","article-title":"Springer Science&Business Meida","author":"von haartman","year":"2007","journal-title":"Low-Frequency Noise in Advanced MOS Devices"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2015.2433921"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1002\/adma.201405068"},{"key":"ref18","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2000.904356"},{"key":"ref19","doi-asserted-by":"publisher","DOI":"10.1049\/ip-cds:20040459"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1021\/nl302049k"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1021\/acs.nanolett.7b01584"},{"key":"ref6","first-page":"310","article-title":"Ferroelectric HfZrOx Ge and GeSn PMOSFETs with Sub-60 mV\/decade Subthreshold Swing, Negligible Hysteresis, and Improved IDS","author":"zhou","year":"2016","journal-title":"IEDM Tech Dig"},{"key":"ref5","first-page":"616","article-title":"Prospects for Ferroelectric HfZrOx FETs with Experimentally CET=0.98nm, SSfor=42mV\/dec, SSrev=28mV\/dec Switch-OFF<0.2V, and Hysteresis-Free Strategies","author":"lee","year":"2015","journal-title":"IEDM Tech Dig"},{"key":"ref8","article-title":"Nano-scaled Ge FinFETs with Low Temperature Ferroelectric HfZrOx on Specific Interfacial Layers Exhibiting 65% S.S. Reduction and Improved ION","author":"su","year":"2017","journal-title":"VLSI Tech Symp"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2015.7409760"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1038\/s41565-017-0010-1"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1021\/nl071804g"},{"key":"ref9","first-page":"573","article-title":"Sub-60 mV\/dec Ferroelectric HZO MoS2 Negative Capacitance Field-effect Transistor with Internal Metal Gate: the Role of Parasitic Capacitance","author":"si","year":"2017","journal-title":"IEDM Tech Dig"}],"event":{"name":"2018 IEEE International Reliability Physics Symposium (IRPS)","start":{"date-parts":[[2018,3,11]]},"location":"Burlingame, CA","end":{"date-parts":[[2018,3,15]]}},"container-title":["2018 IEEE International Reliability Physics Symposium (IRPS)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/8345372\/8353529\/08353696.pdf?arnumber=8353696","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2019,10,17]],"date-time":"2019-10-17T15:08:34Z","timestamp":1571324914000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/8353696\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2018,3]]},"references-count":19,"URL":"https:\/\/doi.org\/10.1109\/irps.2018.8353696","relation":{},"subject":[],"published":{"date-parts":[[2018,3]]}}}