{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,12,30]],"date-time":"2025-12-30T08:47:21Z","timestamp":1767084441217},"reference-count":15,"publisher":"IEEE","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2018,3]]},"DOI":"10.1109\/irps.2018.8353702","type":"proceedings-article","created":{"date-parts":[[2018,5,8]],"date-time":"2018-05-08T17:16:55Z","timestamp":1525799815000},"page":"P-TX.7-1-P-TX.7-5","source":"Crossref","is-referenced-by-count":2,"title":["PBTI evaluation of In<inf>0.65<\/inf>Ga<inf>0.35<\/inf>As\/In<inf>0.53<\/inf>Ga<inf>0.47<\/inf>As nanowire FETs with Al<inf>2<\/inf>O<inf>3<\/inf> and LaAlO<inf>3<\/inf> gate dielectrics"],"prefix":"10.1109","author":[{"given":"Y.","family":"Li","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"K. L.","family":"Wang","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"S. Y.","family":"Di","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"P.","family":"Huang","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"G.","family":"Du","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"X. Y.","family":"Liu","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"key":"ref10","first-page":"148","article-title":"3D KMC reliability simulation of nano-scaled HKMG nMOSFETs with multiple traps coupling","author":"li","year":"0","journal-title":"Proc 2015 International Conference on Simulation of Semiconductor Processes and Devices"},{"key":"ref11","first-page":"918","article-title":"Insight into PBTI in InGaAs nanowire FETs with Al2O3 and LaAIO3 gate dielectrics","author":"li","year":"0","journal-title":"Proc 2016 IEEE International Electron Device Meeting"},{"key":"ref12","article-title":"Comprehensive Investigation of Multi-traps Induced Degradation in Hf02 Based nMOSFETs with Interfacial Layer by 3D-KMC Method","author":"li","year":"0","journal-title":"unpublished presented at IEEE Trans Nanotechnology"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1016\/j.microrel.2011.09.002"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2014.7047086"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2013.6724582"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1063\/1.4755804"},{"key":"ref3","first-page":"633","article-title":"20-80nm channel length InGaAs gate-all-around nanowire MOSFETs with EOT=1.2nm and lowest SS=63mV\/dec","author":"gu","year":"0","journal-title":"Proc 2012 IEEE International Electron Device Meeting"},{"key":"ref6","first-page":"6a.2.1","article-title":"Suitability of high-k gate oxides for III-V devices: a PBTI study in In0.53Ga0.47As devices with Al2O3","author":"franco","year":"0","journal-title":"Proceedings of IEEE Reliability Physics Symposium 2014 IEEE International"},{"key":"ref5","first-page":"606","article-title":"Positive bias temperature instability degradation of InGaAs nMOSFETs with A12O3 gate dielectric","author":"jiao","year":"0","journal-title":"Proc IEEE International Electron Device Meeting 2011"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2012.2190417"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/TDMR.2013.2284376"},{"key":"ref2","first-page":"1","article-title":"InGaAs nanowire MOSFETs with ION= 555 ?A\/?m at IOFF= 100 nA\/?m and V DD = 0.5 V","author":"zota","year":"0","journal-title":"VLSI Technology 2016 IEEE Symposium"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2015.7409658"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.86.094117"}],"event":{"name":"2018 IEEE International Reliability Physics Symposium (IRPS)","start":{"date-parts":[[2018,3,11]]},"location":"Burlingame, CA","end":{"date-parts":[[2018,3,15]]}},"container-title":["2018 IEEE International Reliability Physics Symposium (IRPS)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/8345372\/8353529\/08353702.pdf?arnumber=8353702","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2018,6,1]],"date-time":"2018-06-01T14:56:01Z","timestamp":1527864961000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/8353702\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2018,3]]},"references-count":15,"URL":"https:\/\/doi.org\/10.1109\/irps.2018.8353702","relation":{},"subject":[],"published":{"date-parts":[[2018,3]]}}}