{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,3,19]],"date-time":"2025-03-19T14:36:40Z","timestamp":1742395000196,"version":"3.28.0"},"reference-count":80,"publisher":"IEEE","license":[{"start":{"date-parts":[[2019,3,1]],"date-time":"2019-03-01T00:00:00Z","timestamp":1551398400000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/ieeexplore.ieee.org\/Xplorehelp\/downloads\/license-information\/IEEE.html"},{"start":{"date-parts":[[2019,3,1]],"date-time":"2019-03-01T00:00:00Z","timestamp":1551398400000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2019,3,1]],"date-time":"2019-03-01T00:00:00Z","timestamp":1551398400000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2019,3]]},"DOI":"10.1109\/irps.2019.8720405","type":"proceedings-article","created":{"date-parts":[[2019,5,24]],"date-time":"2019-05-24T04:11:10Z","timestamp":1558671070000},"page":"1-12","source":"Crossref","is-referenced-by-count":3,"title":["Dielectric Breakdown in 2D Layered Hexagonal Boron Nitride \u2014 The Knowns and the Unknowns"],"prefix":"10.1109","author":[{"given":"K.L.","family":"Pey","sequence":"first","affiliation":[]},{"given":"A.","family":"Ranjan","sequence":"additional","affiliation":[]},{"given":"N.","family":"Raghavan","sequence":"additional","affiliation":[]},{"given":"K.","family":"Shubhakar","sequence":"additional","affiliation":[]},{"given":"S.J.","family":"O'Shea","sequence":"additional","affiliation":[]}],"member":"263","reference":[{"key":"ref73","doi-asserted-by":"publisher","DOI":"10.1016\/j.mee.2013.03.021"},{"key":"ref72","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.102.195505"},{"key":"ref71","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.80.155425"},{"key":"ref70","article-title":"Electron knock-on damage in hexagonal boron nitride monolayers","volume":"82","author":"kotakoshi","year":"2010","journal-title":"Physical Review B"},{"key":"ref76","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS.2009.5173307"},{"key":"ref77","doi-asserted-by":"crossref","first-page":"2145","DOI":"10.1088\/0022-3719\/16\/11\/017","article-title":"Weibull statistics in dielectric breakdown; theoretical basis, applications and implications","volume":"16","author":"dissado","year":"1983","journal-title":"Journal of Physics C Solid State Physics"},{"key":"ref74","doi-asserted-by":"publisher","DOI":"10.1063\/1.3271184"},{"key":"ref39","article-title":"Localized random telegraph noise spectroscopy in nanocrystal embedded high-k stacks","author":"ranjan","year":"2019","journal-title":"unpublished"},{"key":"ref75","doi-asserted-by":"publisher","DOI":"10.1109\/RELPHY.2007.369897"},{"key":"ref38","first-page":"7a-4?1","article-title":"CAFM based spectroscopy of stress-induced defects in Hf02 with experimental evidence of the clustering model and metastable vacancy defect state","author":"ranjan","year":"2016","journal-title":"IEEE International Reliability Physics Symposium"},{"key":"ref78","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2002.1175919"},{"key":"ref79","doi-asserted-by":"publisher","DOI":"10.1063\/1.4979915"},{"key":"ref33","doi-asserted-by":"publisher","DOI":"10.1021\/nl801827v"},{"key":"ref32","doi-asserted-by":"publisher","DOI":"10.1063\/1.4939131"},{"key":"ref31","doi-asserted-by":"publisher","DOI":"10.1063\/1.3662043"},{"key":"ref30","article-title":"Synthesis of large-area multilayer hexagonal boron nitride for high material performance","volume":"65","author":"kim","year":"2018","journal-title":"Nature Communications"},{"key":"ref37","doi-asserted-by":"publisher","DOI":"10.1021\/acsami.7b09417"},{"key":"ref36","doi-asserted-by":"publisher","DOI":"10.1021\/acs.nanolett.5b01852"},{"key":"ref35","doi-asserted-by":"crossref","first-page":"15200","DOI":"10.1021\/acsami.5b00723","article-title":"Electron backscatter diffraction study of hexagonal boron nitride growth on cu single-crystal substrates","volume":"7","author":"lee","year":"2015","journal-title":"ACS Applied Materials and Interfaces"},{"key":"ref34","doi-asserted-by":"publisher","DOI":"10.1039\/C7CS00556C"},{"key":"ref60","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.97.064101"},{"key":"ref62","doi-asserted-by":"crossref","first-page":"193409","DOI":"10.1103\/PhysRevB.75.193409","article-title":"Magnetic properties of vacancies in a graphitic boron nitride sheet by first-principles pseudopotential calculations","volume":"75","author":"shi","year":"2007","journal-title":"Physical Review B"},{"key":"ref61","doi-asserted-by":"publisher","DOI":"10.1007\/s00894-014-2197-5"},{"key":"ref63","doi-asserted-by":"publisher","DOI":"10.1021\/nl061081l"},{"key":"ref28","doi-asserted-by":"publisher","DOI":"10.1002\/adma.201304301"},{"key":"ref64","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.63.125205"},{"key":"ref27","doi-asserted-by":"publisher","DOI":"10.1088\/0957-4484\/25\/14\/145604"},{"key":"ref65","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.75.094104"},{"key":"ref66","doi-asserted-by":"publisher","DOI":"10.1038\/ncomms2141"},{"key":"ref29","article-title":"Statistical analysis of dielectric breakdown in CVD multilayer hexagonal boron nitride films","author":"ranjan","year":"2018","journal-title":"IEEE Electron Device Letters"},{"key":"ref67","doi-asserted-by":"publisher","DOI":"10.1038\/nature02817"},{"key":"ref68","doi-asserted-by":"publisher","DOI":"10.1038\/nnano.2009.194"},{"key":"ref69","doi-asserted-by":"publisher","DOI":"10.1021\/acs.chemmater.7b03760"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1021\/nn300989g"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1039\/C4NR01600A"},{"key":"ref20","doi-asserted-by":"publisher","DOI":"10.1021\/nl400559s"},{"key":"ref22","doi-asserted-by":"publisher","DOI":"10.1038\/ncomms11894"},{"key":"ref21","doi-asserted-by":"publisher","DOI":"10.1007\/s12274-013-0310-1"},{"key":"ref24","doi-asserted-by":"publisher","DOI":"10.1021\/nl5006542"},{"key":"ref23","doi-asserted-by":"publisher","DOI":"10.1063\/1.4886096"},{"key":"ref26","doi-asserted-by":"publisher","DOI":"10.1126\/science.aau2132"},{"key":"ref25","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.97.045425"},{"key":"ref50","doi-asserted-by":"publisher","DOI":"10.1063\/1.2974792"},{"key":"ref51","first-page":"725","author":"ranjan","year":"2004","journal-title":"IEEE IEDM Tech Dig"},{"key":"ref59","doi-asserted-by":"publisher","DOI":"10.1038\/nnano.2015.188"},{"key":"ref58","doi-asserted-by":"publisher","DOI":"10.1063\/1.2780084"},{"key":"ref57","doi-asserted-by":"publisher","DOI":"10.1063\/1.4991002"},{"key":"ref56","doi-asserted-by":"publisher","DOI":"10.1063\/1.4941697"},{"key":"ref55","first-page":"458","article-title":"Localized random telegraphic noise study in Hf02 dielectric stacks using scanning tunneling microscopy - Analysis of process and stress-induced traps","author":"ranjan","year":"2015","journal-title":"Proc IEEE Int Physical Failure Analysis Integrated Circuits Symp"},{"key":"ref54","doi-asserted-by":"publisher","DOI":"10.1088\/0034-4885\/59\/6\/001"},{"key":"ref53","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.42.9307"},{"key":"ref52","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.49.57"},{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1021\/nl3002205"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1021\/acsami.6b06425"},{"key":"ref40","doi-asserted-by":"publisher","DOI":"10.1063\/1.5022040"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1038\/s41598-018-21138-x"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2017.8268333"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1021\/nn506645q"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1109\/ESREF.1996.888180"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1063\/1.371590"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1021\/nl1023707"},{"key":"ref18","doi-asserted-by":"publisher","DOI":"10.1016\/j.jcrysgro.2006.12.061"},{"key":"ref19","doi-asserted-by":"publisher","DOI":"10.1021\/nl1022139"},{"key":"ref80","doi-asserted-by":"publisher","DOI":"10.1063\/1.4824035"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1038\/nmat1849"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1038\/nnano.2010.89"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1073\/pnas.0502848102"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1088\/1361-6463\/aaf465"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1038\/nmat1134"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1038\/nmat3695"},{"key":"ref49","doi-asserted-by":"publisher","DOI":"10.1038\/s41928-018-0118-9"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1038\/nature12952"},{"key":"ref46","doi-asserted-by":"publisher","DOI":"10.1002\/adfm.201504771"},{"key":"ref45","doi-asserted-by":"publisher","DOI":"10.1021\/acsami.7b10948"},{"key":"ref48","doi-asserted-by":"crossref","DOI":"10.1002\/adma.201806790","article-title":"Thinnest non-volatile memory based on monolayer h-BN","author":"wu","year":"2019","journal-title":"Advanced Materials"},{"key":"ref47","doi-asserted-by":"publisher","DOI":"10.1002\/adfm.201604811"},{"key":"ref42","doi-asserted-by":"publisher","DOI":"10.1088\/1361-6528\/aabd90"},{"key":"ref41","article-title":"Dielectric breakdown in hexagonal boron nitride single crystals","author":"ranjan","year":"2019","journal-title":"unpublished"},{"key":"ref44","doi-asserted-by":"crossref","first-page":"39758","DOI":"10.1021\/acsami.7b10948","article-title":"Bimodal dielectric breakdown in electronic devices using chemical vapour deposited hexagonal boron nitride as dielectric","volume":"9","author":"palumbo","year":"2017","journal-title":"ACS Applied Materials and Interfaces"},{"key":"ref43","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS.2018.8353574"}],"event":{"name":"2019 IEEE International Reliability Physics Symposium (IRPS)","start":{"date-parts":[[2019,3,31]]},"location":"Monterey, CA, USA","end":{"date-parts":[[2019,4,4]]}},"container-title":["2019 IEEE International Reliability Physics Symposium (IRPS)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/8712125\/8720395\/08720405.pdf?arnumber=8720405","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2022,7,15]],"date-time":"2022-07-15T03:08:35Z","timestamp":1657854515000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/8720405\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2019,3]]},"references-count":80,"URL":"https:\/\/doi.org\/10.1109\/irps.2019.8720405","relation":{},"subject":[],"published":{"date-parts":[[2019,3]]}}}