{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,4,18]],"date-time":"2026-04-18T00:30:47Z","timestamp":1776472247387,"version":"3.51.2"},"reference-count":20,"publisher":"IEEE","license":[{"start":{"date-parts":[[2019,3,1]],"date-time":"2019-03-01T00:00:00Z","timestamp":1551398400000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/ieeexplore.ieee.org\/Xplorehelp\/downloads\/license-information\/IEEE.html"},{"start":{"date-parts":[[2019,3,1]],"date-time":"2019-03-01T00:00:00Z","timestamp":1551398400000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2019,3,1]],"date-time":"2019-03-01T00:00:00Z","timestamp":1551398400000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2019,3]]},"DOI":"10.1109\/irps.2019.8720411","type":"proceedings-article","created":{"date-parts":[[2019,5,24]],"date-time":"2019-05-24T04:11:10Z","timestamp":1558671070000},"page":"1-10","source":"Crossref","is-referenced-by-count":39,"title":["Perimeter Driven Transport in the p-GaN Gate as a Limiting Factor for Gate Reliability"],"prefix":"10.1109","author":[{"given":"S.","family":"Stoffels","sequence":"first","affiliation":[]},{"given":"N.","family":"Posthuma","sequence":"additional","affiliation":[]},{"given":"S.","family":"Decoutere","sequence":"additional","affiliation":[]},{"given":"B.","family":"Bakeroot","sequence":"additional","affiliation":[]},{"given":"A.N.","family":"Tallarico","sequence":"additional","affiliation":[]},{"given":"Enrico","family":"Sangiorgi","sequence":"additional","affiliation":[]},{"given":"Claudio","family":"Fiegna","sequence":"additional","affiliation":[]},{"given":"J.","family":"Zheng","sequence":"additional","affiliation":[]},{"given":"X.","family":"Ma","sequence":"additional","affiliation":[]},{"given":"M.","family":"Borga","sequence":"additional","affiliation":[]},{"given":"Elena","family":"Fabris","sequence":"additional","affiliation":[]},{"given":"M.","family":"Meneghini","sequence":"additional","affiliation":[]},{"given":"E.","family":"Zanoni","sequence":"additional","affiliation":[]},{"given":"G.","family":"Meneghesso","sequence":"additional","affiliation":[]},{"given":"J.","family":"Priesol","sequence":"additional","affiliation":[]},{"given":"A.","family":"Satka","sequence":"additional","affiliation":[]}],"member":"263","reference":[{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2018.2828702"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2017.2769167"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2019.2897911"},{"key":"ref13","first-page":"4b5.1","article-title":"Degradation of GaN-HEM Ts with p-GaN Gate: Dependence on temperature and on geometry","author":"meneghini","year":"2017","journal-title":"IEEE International Reliability Physics Symposium Proceedings"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1002\/pssc.201000935"},{"key":"ref15","first-page":"111","article-title":"Identification of critical regions in AlGaN\/GaN-on-Si Schottky barrier diode using Electron beam induced current method","author":"priesol","year":"2017","journal-title":"41st Workshop on Compound Semiconductor Devices and Integrated Circuits - WOCSDICE Las Palmas de Gran Canaria"},{"key":"ref16","doi-asserted-by":"crossref","first-page":"216","DOI":"10.1016\/S0040-6090(02)01262-2","article-title":"Crystallization behavior of thin ALD-A12O3 films","volume":"425","author":"stefan","year":"2003","journal-title":"Thin Solid Films"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1063\/1.4983558"},{"key":"ref18","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2015.2426711"},{"key":"ref19","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2013.2273216"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1016\/j.microrel.2017.06.061"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS.2017.7936310"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2015.2465137"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2016.2631640"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2016.2553721"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2016.2535133"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/ISPSD.2018.8393658"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/ISPSD.2018.8393634"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2018.2836460"},{"key":"ref20","author":"kauerauf","year":"2007","journal-title":"Degradation and breakdown of MOS gate stacks with high permittivity dielectrics"}],"event":{"name":"2019 IEEE International Reliability Physics Symposium (IRPS)","location":"Monterey, CA, USA","start":{"date-parts":[[2019,3,31]]},"end":{"date-parts":[[2019,4,4]]}},"container-title":["2019 IEEE International Reliability Physics Symposium (IRPS)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/8712125\/8720395\/08720411.pdf?arnumber=8720411","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2022,7,15]],"date-time":"2022-07-15T03:08:35Z","timestamp":1657854515000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/8720411\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2019,3]]},"references-count":20,"URL":"https:\/\/doi.org\/10.1109\/irps.2019.8720411","relation":{},"subject":[],"published":{"date-parts":[[2019,3]]}}}