{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,4,1]],"date-time":"2026-04-01T20:43:00Z","timestamp":1775076180530,"version":"3.50.1"},"reference-count":7,"publisher":"IEEE","license":[{"start":{"date-parts":[[2019,3,1]],"date-time":"2019-03-01T00:00:00Z","timestamp":1551398400000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/ieeexplore.ieee.org\/Xplorehelp\/downloads\/license-information\/IEEE.html"},{"start":{"date-parts":[[2019,3,1]],"date-time":"2019-03-01T00:00:00Z","timestamp":1551398400000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2019,3,1]],"date-time":"2019-03-01T00:00:00Z","timestamp":1551398400000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2019,3]]},"DOI":"10.1109\/irps.2019.8720412","type":"proceedings-article","created":{"date-parts":[[2019,5,24]],"date-time":"2019-05-24T04:11:10Z","timestamp":1558671070000},"page":"1-4","source":"Crossref","is-referenced-by-count":14,"title":["Program\/Erase Cycling Enhanced Lateral Charge Diffusion in Triple-Level Cell Charge-Trapping 3D NAND Flash Memory"],"prefix":"10.1109","author":[{"given":"Rui","family":"Cao","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Jixuan","family":"Wu","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Wenjing","family":"Yang","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Jiezhi","family":"Chen","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Xiangwei","family":"Jiang","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/ISSCC.2017.7870328"},{"key":"ref3","first-page":"130","article-title":"A 45.5?W 15fps Always-On CMOS Image Sensor for Mobile and Wearable Devices","author":"choi","year":"2016","journal-title":"2016 IEEE International Solid-State Circuits Conference -(ISSCC) Digest of Technical Papers"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2017.8268327"},{"key":"ref5","first-page":"78","article-title":"Comprehensive evaluation of early retention (fast charge loss within a few seconds) characteristics in tube-type 3-D NAND flash memory","author":"choi","year":"2016","journal-title":"VLSI Technology 2016 IEEE Symposium"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/VLSIT.2018.8510660"},{"key":"ref2","first-page":"130","article-title":"A 128Gb 3b\/cell V-NAND flash memory with 1 Gb\/s I\/O rate","author":"im","year":"2015","journal-title":"2015 IEEE International Solid-State Circuits Conference -(ISSCC) Digest of Technical Papers"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2016.7838026"}],"event":{"name":"2019 IEEE International Reliability Physics Symposium (IRPS)","location":"Monterey, CA, USA","start":{"date-parts":[[2019,3,31]]},"end":{"date-parts":[[2019,4,4]]}},"container-title":["2019 IEEE International Reliability Physics Symposium (IRPS)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/8712125\/8720395\/08720412.pdf?arnumber=8720412","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2022,7,15]],"date-time":"2022-07-15T03:22:16Z","timestamp":1657855336000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/8720412\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2019,3]]},"references-count":7,"URL":"https:\/\/doi.org\/10.1109\/irps.2019.8720412","relation":{},"subject":[],"published":{"date-parts":[[2019,3]]}}}