{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,10,14]],"date-time":"2025-10-14T20:11:47Z","timestamp":1760472707704,"version":"3.28.0"},"reference-count":18,"publisher":"IEEE","license":[{"start":{"date-parts":[[2019,3,1]],"date-time":"2019-03-01T00:00:00Z","timestamp":1551398400000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/ieeexplore.ieee.org\/Xplorehelp\/downloads\/license-information\/IEEE.html"},{"start":{"date-parts":[[2019,3,1]],"date-time":"2019-03-01T00:00:00Z","timestamp":1551398400000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2019,3,1]],"date-time":"2019-03-01T00:00:00Z","timestamp":1551398400000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2019,3]]},"DOI":"10.1109\/irps.2019.8720415","type":"proceedings-article","created":{"date-parts":[[2019,5,24]],"date-time":"2019-05-24T04:11:10Z","timestamp":1558671070000},"page":"1-4","source":"Crossref","is-referenced-by-count":1,"title":["Fundamental Understanding of Oxide Defects in HfO<sub>2<\/sub>and Y<sub>2<\/sub>O<sub>3<\/sub>on GaAs(001) with High Thermal Stability"],"prefix":"10.1109","author":[{"given":"H. W.","family":"Wan","sequence":"first","affiliation":[]},{"given":"Y. J.","family":"Hong","sequence":"additional","affiliation":[]},{"given":"L. B.","family":"Young","sequence":"additional","affiliation":[]},{"given":"M.","family":"Hong","sequence":"additional","affiliation":[]},{"given":"J.","family":"Kwo","sequence":"additional","affiliation":[]}],"member":"263","reference":[{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.7567\/APEX.9.081501"},{"key":"ref11","first-page":"1","article-title":"III-V CMOS devices and circuits with high-quality atomic-layer-epitaxial La2O3\/GaAs interface","author":"dong","year":"0","journal-title":"2014 Symposium on VLSI Technology"},{"key":"ref12","doi-asserted-by":"crossref","first-page":"93506-1","DOI":"10.1063\/1.4793433","article-title":"Inversion-channel GaAs(100) metal-oxide-semiconductor field-effect-transistors using molecular beam deposited Al2O3 as a gate dielectric on different reconstructed surfaces","volume":"102","author":"chang","year":"2013","journal-title":"Appl Phys Lett"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1016\/0022-0248(95)80221-W"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1109\/VLSIT.2016.7573371"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1109\/CAMTA.2017.8058135"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1063\/1.4936991"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1063\/1.4980170"},{"key":"ref18","first-page":"358","article-title":"Understanding the suppresed charge trapping in relaxed-and strained-Ge\/SiO2\/HfO2 pMOSFETs and implications for the screening of alternative high-mobility substrate\/dielectric CMOS gate stacks","author":"franco","year":"0","journal-title":"2013 IEEE Int Electron Devices Meet"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS.2017.7936422"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2012.6479091"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1143\/APEX.4.114202"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1063\/1.2956393"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1016\/j.mee.2017.05.037"},{"key":"ref7","doi-asserted-by":"crossref","first-page":"172110-1","DOI":"10.1063\/1.4706261","article-title":"Realization of high-quality HfO2 on In0.53Ga0.47As by in-situ atomic-layer-deposition","volume":"100","author":"lin","year":"2012","journal-title":"Appl Phys Lett"},{"key":"ref2","first-page":"38t","article-title":"First demonstration of ?3500 cm2\/V-s electron mobility and sufficient BTI reliability (max Vov up to 0.6V) In0.53Ga0.47As nFET using an IL\/LaSiOx\/HfO2 gate stack","author":"sioncke","year":"0","journal-title":"2017 Symposium on VLSI Technology"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1063\/1.5003616"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1016\/j.jcrysgro.2016.11.118"}],"event":{"name":"2019 IEEE International Reliability Physics Symposium (IRPS)","start":{"date-parts":[[2019,3,31]]},"location":"Monterey, CA, USA","end":{"date-parts":[[2019,4,4]]}},"container-title":["2019 IEEE International Reliability Physics Symposium (IRPS)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/8712125\/8720395\/08720415.pdf?arnumber=8720415","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2024,7,18]],"date-time":"2024-07-18T15:25:26Z","timestamp":1721316326000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/8720415\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2019,3]]},"references-count":18,"URL":"https:\/\/doi.org\/10.1109\/irps.2019.8720415","relation":{},"subject":[],"published":{"date-parts":[[2019,3]]}}}