{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,8,21]],"date-time":"2025-08-21T18:01:34Z","timestamp":1755799294177,"version":"3.44.0"},"reference-count":16,"publisher":"IEEE","license":[{"start":{"date-parts":[[2019,3,1]],"date-time":"2019-03-01T00:00:00Z","timestamp":1551398400000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2019,3,1]],"date-time":"2019-03-01T00:00:00Z","timestamp":1551398400000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2019,3]]},"DOI":"10.1109\/irps.2019.8720444","type":"proceedings-article","created":{"date-parts":[[2019,5,24]],"date-time":"2019-05-24T00:11:10Z","timestamp":1558656670000},"page":"1-4","source":"Crossref","is-referenced-by-count":9,"title":["Comprehensive Study for OFF-State Hot Carrier Degrdation of Scaled nMOSFETs in DRAM"],"prefix":"10.1109","author":[{"given":"Nam-Hyun","family":"Lee","sequence":"first","affiliation":[{"name":"Memory Division, Samsung Electronics Hwasung, Gyeonggi, 445-701, Republic of Korea"}]},{"given":"Jongkyun","family":"Kim","sequence":"additional","affiliation":[{"name":"Memory Division, Samsung Electronics Hwasung, Gyeonggi, 445-701, Republic of Korea"}]},{"given":"Donghee","family":"Son","sequence":"additional","affiliation":[{"name":"Memory Division, Samsung Electronics Hwasung, Gyeonggi, 445-701, Republic of Korea"}]},{"given":"Kangjun","family":"Kim","sequence":"additional","affiliation":[{"name":"Memory Division, Samsung Electronics Hwasung, Gyeonggi, 445-701, Republic of Korea"}]},{"given":"Jung Eun","family":"Seok","sequence":"additional","affiliation":[{"name":"Memory Division, Samsung Electronics Hwasung, Gyeonggi, 445-701, Republic of Korea"}]}],"member":"263","reference":[{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/RELPHY.2008.4558946"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/ESSDERC.2014.6948836"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS.2014.6860661"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS.2018.8353575"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1109\/JPROC.2002.808156"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1016\/j.microrel.2018.06.101"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2006.877306"},{"key":"ref4","first-page":"6a.2.1","article-title":"The ‘permanent’ component of NBTI: Composition and annealing","author":"grasser","year":"2011","journal-title":"Reliability Physics Symposium (IRPS) 2011 IEEE International"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS.2011.5784544"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/IRWS.2004.1422747"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1016\/S0026-2714(01)00176-7"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/55.116964"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2011.2145350"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1063\/1.1567461"},{"key":"ref1","first-page":"295","article-title":"Hot-electron-induced MOSFET degradation-model, monitor, and improvement","volume":"sc 20","author":"hu","year":"1985","journal-title":"IEEE Journal of Solid-State Circuits"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2006.346895"}],"event":{"name":"2019 IEEE International Reliability Physics Symposium (IRPS)","start":{"date-parts":[[2019,3,31]]},"location":"Monterey, CA, USA","end":{"date-parts":[[2019,4,4]]}},"container-title":["2019 IEEE International Reliability Physics Symposium (IRPS)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/8712125\/8720395\/08720444.pdf?arnumber=8720444","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,8,19]],"date-time":"2025-08-19T18:08:51Z","timestamp":1755626931000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/8720444\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2019,3]]},"references-count":16,"URL":"https:\/\/doi.org\/10.1109\/irps.2019.8720444","relation":{},"subject":[],"published":{"date-parts":[[2019,3]]}}}