{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,12,18]],"date-time":"2025-12-18T14:10:18Z","timestamp":1766067018050,"version":"3.28.0"},"reference-count":9,"publisher":"IEEE","license":[{"start":{"date-parts":[[2019,3,1]],"date-time":"2019-03-01T00:00:00Z","timestamp":1551398400000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/ieeexplore.ieee.org\/Xplorehelp\/downloads\/license-information\/IEEE.html"},{"start":{"date-parts":[[2019,3,1]],"date-time":"2019-03-01T00:00:00Z","timestamp":1551398400000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2019,3,1]],"date-time":"2019-03-01T00:00:00Z","timestamp":1551398400000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2019,3]]},"DOI":"10.1109\/irps.2019.8720445","type":"proceedings-article","created":{"date-parts":[[2019,5,24]],"date-time":"2019-05-24T04:11:10Z","timestamp":1558671070000},"page":"1-6","source":"Crossref","is-referenced-by-count":4,"title":["Impact of Sidewall Etching on the Dynamic Performance of GaN-on-Si E-Mode Transistors"],"prefix":"10.1109","author":[{"given":"A.","family":"Tajalli","sequence":"first","affiliation":[]},{"given":"E.","family":"Canato","sequence":"additional","affiliation":[]},{"given":"A.","family":"Nardo","sequence":"additional","affiliation":[]},{"given":"M.","family":"Meneghini","sequence":"additional","affiliation":[]},{"given":"A.","family":"Stockman","sequence":"additional","affiliation":[]},{"given":"P.","family":"Moens","sequence":"additional","affiliation":[]},{"given":"E.","family":"Zanoni","sequence":"additional","affiliation":[]},{"given":"G.","family":"Meneghesso","sequence":"additional","affiliation":[]}],"member":"263","reference":[{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS.2017.7936311"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS.2017.7936282"},{"key":"ref6","doi-asserted-by":"crossref","DOI":"10.3390\/en10020153","article-title":"Technology and Reliability of Normally-OffGaN HEMTs with p-Type Gate","volume":"10","author":"meneghini","year":"2017","journal-title":"Energies"},{"key":"ref5","first-page":"1010419","article-title":"GaN HEMTs with p-GaN gate: field- and time-dependent degradation","author":"meneghesso","year":"0","journal-title":"Proc SPIE 10104 Gallium Nitride Materials and Devices XII"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS.2018.8353582"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2017.2769167"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1007\/978-3-319-43199-4"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1016\/j.mssp.2017.10.009"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1088\/1361-6463\/aaaf9d"}],"event":{"name":"2019 IEEE International Reliability Physics Symposium (IRPS)","start":{"date-parts":[[2019,3,31]]},"location":"Monterey, CA, USA","end":{"date-parts":[[2019,4,4]]}},"container-title":["2019 IEEE International Reliability Physics Symposium (IRPS)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/8712125\/8720395\/08720445.pdf?arnumber=8720445","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2022,7,15]],"date-time":"2022-07-15T03:13:13Z","timestamp":1657854793000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/8720445\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2019,3]]},"references-count":9,"URL":"https:\/\/doi.org\/10.1109\/irps.2019.8720445","relation":{},"subject":[],"published":{"date-parts":[[2019,3]]}}}