{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,9,6]],"date-time":"2024-09-06T02:51:23Z","timestamp":1725591083516},"reference-count":6,"publisher":"IEEE","license":[{"start":{"date-parts":[[2019,3,1]],"date-time":"2019-03-01T00:00:00Z","timestamp":1551398400000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/ieeexplore.ieee.org\/Xplorehelp\/downloads\/license-information\/IEEE.html"},{"start":{"date-parts":[[2019,3,1]],"date-time":"2019-03-01T00:00:00Z","timestamp":1551398400000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2019,3,1]],"date-time":"2019-03-01T00:00:00Z","timestamp":1551398400000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2019,3]]},"DOI":"10.1109\/irps.2019.8720460","type":"proceedings-article","created":{"date-parts":[[2019,5,24]],"date-time":"2019-05-24T04:11:10Z","timestamp":1558671070000},"page":"1-4","source":"Crossref","is-referenced-by-count":2,"title":["A Novel HV-NPN ESD Protection Device with Buried Floating P-Type Implant"],"prefix":"10.1109","author":[{"given":"Jie Jack","family":"Zeng","sequence":"first","affiliation":[]},{"given":"Ruchil","family":"Jain","sequence":"additional","affiliation":[]},{"given":"Kyong Jin","family":"Hwang","sequence":"additional","affiliation":[]},{"given":"Robert","family":"Gauthier","sequence":"additional","affiliation":[]}],"member":"263","reference":[{"key":"ref4","article-title":"Effect of the N+-sinker in self-triggering bipolar ESD protection structuren","author":"heyn","year":"2002","journal-title":"IEEE EOS\/ESD Symp"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/RELPHY.1996.492124"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2014.2381511"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/T-ED.1970.16976"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1016\/S0026-2714(99)00075-X"},{"key":"ref1","article-title":"0.18?m BCD technology platform with performance and cost optimized fully isolated LDMOS","author":"li","year":"2015","journal-title":"IEEE Int Conf Electron Devices and Solid-State Circuits (EDSSC)"}],"event":{"name":"2019 IEEE International Reliability Physics Symposium (IRPS)","start":{"date-parts":[[2019,3,31]]},"location":"Monterey, CA, USA","end":{"date-parts":[[2019,4,4]]}},"container-title":["2019 IEEE International Reliability Physics Symposium (IRPS)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/8712125\/8720395\/08720460.pdf?arnumber=8720460","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2022,7,15]],"date-time":"2022-07-15T03:08:35Z","timestamp":1657854515000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/8720460\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2019,3]]},"references-count":6,"URL":"https:\/\/doi.org\/10.1109\/irps.2019.8720460","relation":{},"subject":[],"published":{"date-parts":[[2019,3]]}}}