{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,11,1]],"date-time":"2025-11-01T16:07:46Z","timestamp":1762013266976,"version":"build-2065373602"},"reference-count":6,"publisher":"IEEE","license":[{"start":{"date-parts":[[2019,3,1]],"date-time":"2019-03-01T00:00:00Z","timestamp":1551398400000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/ieeexplore.ieee.org\/Xplorehelp\/downloads\/license-information\/IEEE.html"},{"start":{"date-parts":[[2019,3,1]],"date-time":"2019-03-01T00:00:00Z","timestamp":1551398400000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2019,3,1]],"date-time":"2019-03-01T00:00:00Z","timestamp":1551398400000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2019,3]]},"DOI":"10.1109\/irps.2019.8720538","type":"proceedings-article","created":{"date-parts":[[2019,5,24]],"date-time":"2019-05-24T04:11:10Z","timestamp":1558671070000},"page":"1-4","source":"Crossref","is-referenced-by-count":9,"title":["Permanent and Transient Effects of High-Temperature Bias Stress on Room- Temperature $V_{T}$ Drift Measurements in SiC Power MOSFETs"],"prefix":"10.1109","author":[{"given":"Daniel B.","family":"Habersat","sequence":"first","affiliation":[]},{"given":"Ronald","family":"Green","sequence":"additional","affiliation":[]},{"given":"Aivars J.","family":"Lelis","sequence":"additional","affiliation":[]}],"member":"263","reference":[{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/TDMR.2018.2813063"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2014.2356172"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1016\/j.microrel.2017.11.020"},{"key":"ref5","article-title":"Influence of High-Temperature Bias Stress on Room- Temperature VT Drift Measurements in SiC Power MOSFETs","author":"habersat","year":"0","journal-title":"Mater Sci Forum"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1016\/j.microrel.2017.12.015"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS.2016.7574588"}],"event":{"name":"2019 IEEE International Reliability Physics Symposium (IRPS)","start":{"date-parts":[[2019,3,31]]},"location":"Monterey, CA, USA","end":{"date-parts":[[2019,4,4]]}},"container-title":["2019 IEEE International Reliability Physics Symposium (IRPS)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/8712125\/8720395\/08720538.pdf?arnumber=8720538","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2022,7,15]],"date-time":"2022-07-15T03:08:34Z","timestamp":1657854514000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/8720538\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2019,3]]},"references-count":6,"URL":"https:\/\/doi.org\/10.1109\/irps.2019.8720538","relation":{},"subject":[],"published":{"date-parts":[[2019,3]]}}}