{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,1,21]],"date-time":"2026-01-21T05:44:12Z","timestamp":1768974252849,"version":"3.49.0"},"reference-count":7,"publisher":"IEEE","license":[{"start":{"date-parts":[[2019,3,1]],"date-time":"2019-03-01T00:00:00Z","timestamp":1551398400000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/ieeexplore.ieee.org\/Xplorehelp\/downloads\/license-information\/IEEE.html"},{"start":{"date-parts":[[2019,3,1]],"date-time":"2019-03-01T00:00:00Z","timestamp":1551398400000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2019,3,1]],"date-time":"2019-03-01T00:00:00Z","timestamp":1551398400000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2019,3]]},"DOI":"10.1109\/irps.2019.8720549","type":"proceedings-article","created":{"date-parts":[[2019,5,24]],"date-time":"2019-05-24T04:11:10Z","timestamp":1558671070000},"page":"1-6","source":"Crossref","is-referenced-by-count":22,"title":["$\\mu s$-Range Evaluation of Threshold Voltage Instabilities of GaN-on-Si HEMTs with p-GaN Gate"],"prefix":"10.1109","author":[{"given":"E.","family":"Canato","sequence":"first","affiliation":[]},{"given":"F.","family":"Masin","sequence":"additional","affiliation":[]},{"given":"M.","family":"Borga","sequence":"additional","affiliation":[]},{"given":"E.","family":"Zanoni","sequence":"additional","affiliation":[]},{"given":"M.","family":"Meneghini","sequence":"additional","affiliation":[]},{"given":"G.","family":"Meneghesso","sequence":"additional","affiliation":[]},{"given":"A.","family":"Stockman","sequence":"additional","affiliation":[]},{"given":"A.","family":"Banerjee","sequence":"additional","affiliation":[]},{"given":"P.","family":"Moens","sequence":"additional","affiliation":[]}],"member":"263","reference":[{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2018.2828702"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2017.2769167"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1016\/j.microrel.2018.06.037"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2018.2847669"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS.2018.8353582"},{"key":"ref2","first-page":"153","article-title":"Technology and Reliability of Normally-Off GaN HEMTs with p-Type Gate","volume":"10","author":"meneghini","year":"0","journal-title":"Energies 2017"},{"key":"ref1","first-page":"1010419","article-title":"GaN HEMTs with p-GaN gate: field- and time-dependent degradation","author":"meneghesso","year":"0","journal-title":"Proc SPIE 10104 Gallium Nitride Materials and Devices XII"}],"event":{"name":"2019 IEEE International Reliability Physics Symposium (IRPS)","location":"Monterey, CA, USA","start":{"date-parts":[[2019,3,31]]},"end":{"date-parts":[[2019,4,4]]}},"container-title":["2019 IEEE International Reliability Physics Symposium (IRPS)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/8712125\/8720395\/08720549.pdf?arnumber=8720549","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2022,7,15]],"date-time":"2022-07-15T03:19:08Z","timestamp":1657855148000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/8720549\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2019,3]]},"references-count":7,"URL":"https:\/\/doi.org\/10.1109\/irps.2019.8720549","relation":{},"subject":[],"published":{"date-parts":[[2019,3]]}}}