{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,11,14]],"date-time":"2025-11-14T17:26:36Z","timestamp":1763141196159,"version":"3.28.0"},"reference-count":20,"publisher":"IEEE","license":[{"start":{"date-parts":[[2019,3,1]],"date-time":"2019-03-01T00:00:00Z","timestamp":1551398400000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/ieeexplore.ieee.org\/Xplorehelp\/downloads\/license-information\/IEEE.html"},{"start":{"date-parts":[[2019,3,1]],"date-time":"2019-03-01T00:00:00Z","timestamp":1551398400000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2019,3,1]],"date-time":"2019-03-01T00:00:00Z","timestamp":1551398400000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2019,3]]},"DOI":"10.1109\/irps.2019.8720553","type":"proceedings-article","created":{"date-parts":[[2019,5,24]],"date-time":"2019-05-24T04:11:10Z","timestamp":1558671070000},"page":"1-7","source":"Crossref","is-referenced-by-count":20,"title":["New Insights into the Imprint Effect in FE-HfO<sub>2<\/sub> and its Recovery"],"prefix":"10.1109","author":[{"given":"Y.","family":"Higashi","sequence":"first","affiliation":[]},{"given":"K.","family":"Florent","sequence":"additional","affiliation":[]},{"given":"A.","family":"Subirats","sequence":"additional","affiliation":[]},{"given":"B.","family":"Kaczer","sequence":"additional","affiliation":[]},{"given":"L.","family":"Di Piazza","sequence":"additional","affiliation":[]},{"given":"S.","family":"Clima","sequence":"additional","affiliation":[]},{"given":"N.","family":"Ronchi","sequence":"additional","affiliation":[]},{"given":"S. R. C.","family":"McMitchell","sequence":"additional","affiliation":[]},{"given":"K.","family":"Banerjee","sequence":"additional","affiliation":[]},{"given":"U.","family":"Celano","sequence":"additional","affiliation":[]},{"given":"M.","family":"Suzuki","sequence":"additional","affiliation":[]},{"given":"D.","family":"Linten","sequence":"additional","affiliation":[]},{"given":"J.","family":"Van Houdt","sequence":"additional","affiliation":[]}],"member":"263","reference":[{"key":"ref10","article-title":"On the Statistical Theory of Crystallization of Metals","volume":"3","author":"kolmogorov","year":"1937","journal-title":"Nauk SSSR Ser Mat"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1063\/1.1750631"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.66.214109"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1063\/1.5010207"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.89.225901"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2011.2158825"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1063\/1.359414"},{"key":"ref17","article-title":"Oxygen vacancy mobility determined from current measurements in thin Ba0.5Sr0.5 TiO3 films","volume":"73","author":"zafar","year":"1995","journal-title":"Appl Phys Lett"},{"key":"ref18","first-page":"3","article-title":"Investigation of the Endurance of FE-HfO2 Devices by Means of TDDB Studies","volume":"6d","author":"florent","year":"0","journal-title":"2018 IEEE International Reliability Physics Symposium (IRPS)"},{"key":"ref19","article-title":"Extraction of the Defect Distributions in DRAM Capacitor Using I-V and C-V Sensitivity Maps","volume":"37","author":"sereni","year":"2016","journal-title":"IEEE Elect Devi Lett"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1063\/1.5026424"},{"key":"ref3","doi-asserted-by":"crossref","DOI":"10.1103\/PhysRevB.68.134103","article-title":"First-principles study of oxygen-vacancy pinning of domain walls in PbTiO3","volume":"68","author":"he","year":"2003","journal-title":"Phys Rev B"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1063\/1.1497698"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1143\/JJAP.38.5406"},{"key":"ref8","article-title":"Imprint in Ferroelectric Capacitors","volume":"35","author":"bruce","year":"1996","journal-title":"Jpn J Appl Phys"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1063\/1.1805190"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1063\/1.1984075"},{"key":"ref1","first-page":"158t","article-title":"First Demonstration of Vertically Stacked Ferroelectric Al Doped HfO2 Devices for NAND Applications","author":"florent","year":"0","journal-title":"2017 Symposium on VLSI Technology"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1143\/JPSJ.63.1031"},{"key":"ref20","first-page":"380","article-title":"First-Principles Perspective on Poling Mechanisms and Ferroelectric\/Antiferroelectric Behavior of Hf1-xZrxO2 for FEFET Applications","author":"clima","year":"0","journal-title":"2018 IEEE International Electron Devices Meeting (IEDM)"}],"event":{"name":"2019 IEEE International Reliability Physics Symposium (IRPS)","start":{"date-parts":[[2019,3,31]]},"location":"Monterey, CA, USA","end":{"date-parts":[[2019,4,4]]}},"container-title":["2019 IEEE International Reliability Physics Symposium (IRPS)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/8712125\/8720395\/08720553.pdf?arnumber=8720553","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2022,7,15]],"date-time":"2022-07-15T03:08:35Z","timestamp":1657854515000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/8720553\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2019,3]]},"references-count":20,"URL":"https:\/\/doi.org\/10.1109\/irps.2019.8720553","relation":{},"subject":[],"published":{"date-parts":[[2019,3]]}}}