{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,11,8]],"date-time":"2025-11-08T17:49:53Z","timestamp":1762624193730},"reference-count":13,"publisher":"IEEE","license":[{"start":{"date-parts":[[2019,3,1]],"date-time":"2019-03-01T00:00:00Z","timestamp":1551398400000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/ieeexplore.ieee.org\/Xplorehelp\/downloads\/license-information\/IEEE.html"},{"start":{"date-parts":[[2019,3,1]],"date-time":"2019-03-01T00:00:00Z","timestamp":1551398400000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2019,3,1]],"date-time":"2019-03-01T00:00:00Z","timestamp":1551398400000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2019,3]]},"DOI":"10.1109\/irps.2019.8720557","type":"proceedings-article","created":{"date-parts":[[2019,5,24]],"date-time":"2019-05-24T04:11:10Z","timestamp":1558671070000},"source":"Crossref","is-referenced-by-count":7,"title":["Design Strategies for Rugged SiC Power Devices"],"prefix":"10.1109","author":[{"given":"Diang","family":"Xing","sequence":"first","affiliation":[]},{"given":"Tianshi","family":"Liu","sequence":"additional","affiliation":[]},{"given":"Susanna","family":"Yu","sequence":"additional","affiliation":[]},{"given":"Minseok","family":"Kang","sequence":"additional","affiliation":[]},{"given":"Arash","family":"Salemi","sequence":"additional","affiliation":[]},{"given":"Marvin","family":"White","sequence":"additional","affiliation":[]},{"given":"Anant","family":"Agarwal","sequence":"additional","affiliation":[]}],"member":"263","reference":[{"key":"ref10","article-title":"Optimization of 1700V SiC MOSFET for Short Circuit Ruggedness","author":"bolotnikov","year":"2018","journal-title":"Proc European Conference of Silicon Carbide and Related Materials"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1007\/s11664-007-0321-3"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2014.2356172"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1109\/55.644081"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/EPE.2016.7695414"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/PVSC-Vol2.2012.6656721"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.23919\/ISPSD.2017.7988988"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/ECCE.2013.6647436"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2017.2785771"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/TPEL.2014.2353417"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/APEC.2018.8341238"},{"key":"ref1","article-title":"SiC Power Devices and Modules Application Note","year":"2013","journal-title":"ROHM Co Ltd Kyoto Kyoto Prefecture Japan"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.4028\/www.scientific.net\/MSF.924.727"}],"event":{"name":"2019 IEEE International Reliability Physics Symposium (IRPS)","location":"Monterey, CA, USA","start":{"date-parts":[[2019,3,31]]},"end":{"date-parts":[[2019,4,4]]}},"container-title":["2019 IEEE International Reliability Physics Symposium (IRPS)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/8712125\/8720395\/08720557.pdf?arnumber=8720557","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2022,7,15]],"date-time":"2022-07-15T03:08:35Z","timestamp":1657854515000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/8720557\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2019,3]]},"references-count":13,"URL":"https:\/\/doi.org\/10.1109\/irps.2019.8720557","relation":{},"subject":[],"published":{"date-parts":[[2019,3]]}}}