{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,9,2]],"date-time":"2025-09-02T00:03:47Z","timestamp":1756771427026,"version":"3.44.0"},"reference-count":13,"publisher":"IEEE","license":[{"start":{"date-parts":[[2019,3,1]],"date-time":"2019-03-01T00:00:00Z","timestamp":1551398400000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2019,3,1]],"date-time":"2019-03-01T00:00:00Z","timestamp":1551398400000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2019,3]]},"DOI":"10.1109\/irps.2019.8720589","type":"proceedings-article","created":{"date-parts":[[2019,5,24]],"date-time":"2019-05-24T00:11:10Z","timestamp":1558656670000},"page":"1-5","source":"Crossref","is-referenced-by-count":2,"title":["Gate Stability and Robustness of In-Situ Oxide GaN Interlayer Based Vertical Trench MOSFETs (OG-FETs)"],"prefix":"10.1109","author":[{"given":"Maria","family":"Ruzzarin","sequence":"first","affiliation":[{"name":"Department of Information Engineering, University of Padova, Padova, 35131, Italy"}]},{"given":"Matteo","family":"Borga","sequence":"additional","affiliation":[{"name":"Department of Information Engineering, University of Padova, Padova, 35131, Italy"}]},{"given":"Enrico","family":"Zanoni","sequence":"additional","affiliation":[{"name":"Department of Information Engineering, University of Padova, Padova, 35131, Italy"}]},{"given":"Matteo","family":"Meneghini","sequence":"additional","affiliation":[{"name":"Department of Information Engineering, University of Padova, Padova, 35131, Italy"}]},{"given":"Gaudenzio","family":"Meneghesso","sequence":"additional","affiliation":[{"name":"Department of Information Engineering, University of Padova, Padova, 35131, Italy"}]},{"given":"Dong","family":"Ji","sequence":"additional","affiliation":[{"name":"Department of Electrical and Computer Engineering, University of California, Davis, CA, 95616, USA"}]},{"given":"Wenwen","family":"Li","sequence":"additional","affiliation":[{"name":"Department of Electrical and Computer Engineering, University of California, Davis, CA, 95616, USA"}]},{"given":"Silvia H.","family":"Chan","sequence":"additional","affiliation":[{"name":"Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA, 93106, USA"}]},{"given":"Anchal","family":"Agarwal","sequence":"additional","affiliation":[{"name":"Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA, 93106, USA"}]},{"given":"Chirag","family":"Gupta","sequence":"additional","affiliation":[{"name":"Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA, 93106, USA"}]},{"given":"Stacia","family":"Keller","sequence":"additional","affiliation":[{"name":"Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA, 93106, USA"}]},{"given":"Umesh K.","family":"Mishra","sequence":"additional","affiliation":[{"name":"Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA, 93106, USA"}]},{"given":"Srabanti","family":"Chowdhury","sequence":"additional","affiliation":[{"name":"Electrical Engineering, Stanford University, Stanford, California, 94305, United States"}]}],"member":"263","reference":[{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1002\/pssc.201510191"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.7567\/APEX.11.041002"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1063\/1.5009757"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1063\/1.4944466"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2017.2670925"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.7567\/APEX.7.021002"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2018.2813312"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1088\/1361-6528\/aa57b6"},{"key":"ref8","volume":"7","author":"wolters","year":"1981","journal-title":"Insulating Films on Semiconductors Spinger Se"},{"key":"ref7","first-page":"223","article-title":"Demonstrating > 1.4kV OG-FET performace with a novel double field-plated geometry and the successful scaling of large-area devices","author":"ji","year":"2017","journal-title":"IEDM"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1088\/0268-1242\/28\/7\/074014"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1088\/1361-6463\/aaaf9d"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1155\/2014\/578168"}],"event":{"name":"2019 IEEE International Reliability Physics Symposium (IRPS)","start":{"date-parts":[[2019,3,31]]},"location":"Monterey, CA, USA","end":{"date-parts":[[2019,4,4]]}},"container-title":["2019 IEEE International Reliability Physics Symposium (IRPS)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/8712125\/8720395\/08720589.pdf?arnumber=8720589","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,9,1]],"date-time":"2025-09-01T19:15:08Z","timestamp":1756754108000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/8720589\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2019,3]]},"references-count":13,"URL":"https:\/\/doi.org\/10.1109\/irps.2019.8720589","relation":{},"subject":[],"published":{"date-parts":[[2019,3]]}}}