{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,1,31]],"date-time":"2026-01-31T07:50:35Z","timestamp":1769845835316,"version":"3.49.0"},"reference-count":12,"publisher":"IEEE","license":[{"start":{"date-parts":[[2019,3,1]],"date-time":"2019-03-01T00:00:00Z","timestamp":1551398400000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/ieeexplore.ieee.org\/Xplorehelp\/downloads\/license-information\/IEEE.html"},{"start":{"date-parts":[[2019,3,1]],"date-time":"2019-03-01T00:00:00Z","timestamp":1551398400000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2019,3,1]],"date-time":"2019-03-01T00:00:00Z","timestamp":1551398400000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2019,3]]},"DOI":"10.1109\/irps.2019.8720590","type":"proceedings-article","created":{"date-parts":[[2019,5,24]],"date-time":"2019-05-24T04:11:10Z","timestamp":1558671070000},"page":"1-5","source":"Crossref","is-referenced-by-count":10,"title":["GIDL Increase Due to HCI Stress: Correlation Study of MOSFET Degradation Parameters and Modelling for Reliability Simulation"],"prefix":"10.1109","author":[{"given":"Edoardo","family":"Ceccarelli","sequence":"first","affiliation":[]},{"given":"Kevin","family":"Manning","sequence":"additional","affiliation":[]},{"given":"Seamus","family":"Maxwell","sequence":"additional","affiliation":[]},{"given":"Colm","family":"Heffernan","sequence":"additional","affiliation":[]}],"member":"263","reference":[{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/16.658689"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS.2010.5488852"},{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1063\/1.3608241"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/TDMR.2007.901180"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2017.2694440"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1007\/978-3-319-08994-2_16"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1109\/TDMR.2017.2672740"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS.2018.8353684"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/66.983439"},{"key":"ref2","first-page":"2e","article-title":"Scaling and reliability of nand flash devices","author":"park","year":"2014","journal-title":"Reliability Physics Symposium 2014 IEEE International"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS.2013.6531961"},{"key":"ref1","doi-asserted-by":"crossref","first-page":"718","DOI":"10.1109\/IEDM.1987.191531","article-title":"the impact of gate-induced drain leakage current on mosfet scaling","author":"chan","year":"1987","journal-title":"1987 International Electron Devices Meeting"}],"event":{"name":"2019 IEEE International Reliability Physics Symposium (IRPS)","location":"Monterey, CA, USA","start":{"date-parts":[[2019,3,31]]},"end":{"date-parts":[[2019,4,4]]}},"container-title":["2019 IEEE International Reliability Physics Symposium (IRPS)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/8712125\/8720395\/08720590.pdf?arnumber=8720590","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2022,7,15]],"date-time":"2022-07-15T03:19:08Z","timestamp":1657855148000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/8720590\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2019,3]]},"references-count":12,"URL":"https:\/\/doi.org\/10.1109\/irps.2019.8720590","relation":{},"subject":[],"published":{"date-parts":[[2019,3]]}}}