{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,5,8]],"date-time":"2026-05-08T16:12:18Z","timestamp":1778256738661,"version":"3.51.4"},"reference-count":17,"publisher":"IEEE","license":[{"start":{"date-parts":[[2019,3,1]],"date-time":"2019-03-01T00:00:00Z","timestamp":1551398400000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/ieeexplore.ieee.org\/Xplorehelp\/downloads\/license-information\/IEEE.html"},{"start":{"date-parts":[[2019,3,1]],"date-time":"2019-03-01T00:00:00Z","timestamp":1551398400000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2019,3,1]],"date-time":"2019-03-01T00:00:00Z","timestamp":1551398400000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2019,3]]},"DOI":"10.1109\/irps.2019.8720592","type":"proceedings-article","created":{"date-parts":[[2019,5,24]],"date-time":"2019-05-24T04:11:10Z","timestamp":1558671070000},"page":"1-6","source":"Crossref","is-referenced-by-count":19,"title":["Array-Based Statistical Characterization of CMOS Degradation Modes and Modeling of the Time-Dependent Variability Induced by Different Stress Patterns in the $\\{\\boldsymbol{V_{G}}, \\boldsymbol{V_{D}}\\}$ bias space"],"prefix":"10.1109","author":[{"given":"E.","family":"Bury","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"A.","family":"Chasin","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"M.","family":"Vandemaele","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"S.","family":"Van Beek","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"J.","family":"Franco","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"B.","family":"Kaczer","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"D.","family":"Linten","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/TDMR.2007.901180"},{"key":"ref11","first-page":"1","article-title":"Hot carrier degradation in nanowire transistors: Physical mechanisms, width dependence and impact of Self-Heating","author":"laurent","year":"2015","journal-title":"Proc Symp VLSI Tech (VLSI)"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1016\/j.microrel.2017.12.021"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1149\/1.3572292"},{"key":"ref14","first-page":"379","article-title":"Understanding the suppressed charge trapping in relaxed- and strained-Ge\/SiO2\/HfO2 pMOSFETs and implications for the screening of alternative high-mobility substrate\/dielectric CMOS gate stacks","author":"franco","year":"2013","journal-title":"Proc IEEE International Electron Devices Meeting (IEDM)"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS.2010.5488859"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2016.2590946"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS.2010.5488855"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS.2018.8353575"},{"key":"ref3","first-page":"380","article-title":"Reliability Characterization of 10nm FinFET Technology with multi-VT gate stack for Low Power and High Performance","author":"jin","year":"2016","journal-title":"IEEE Int Electron Devices (IEDM) Tech Dig"},{"key":"ref6","first-page":"2d.5.1","article-title":"Statistical assessment of the full VG\/VD degradation space using dedicated device arrays","author":"bury","year":"2017","journal-title":"Proc IEEE International Reliability Physics Symposium (IRPS)"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS.2017.7936419"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS.2018.8353541"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1116\/1.4972872"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2002.1175806"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS.2017.7936277"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS.2009.5173224"}],"event":{"name":"2019 IEEE International Reliability Physics Symposium (IRPS)","location":"Monterey, CA, USA","start":{"date-parts":[[2019,3,31]]},"end":{"date-parts":[[2019,4,4]]}},"container-title":["2019 IEEE International Reliability Physics Symposium (IRPS)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/8712125\/8720395\/08720592.pdf?arnumber=8720592","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2022,7,15]],"date-time":"2022-07-15T03:13:13Z","timestamp":1657854793000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/8720592\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2019,3]]},"references-count":17,"URL":"https:\/\/doi.org\/10.1109\/irps.2019.8720592","relation":{},"subject":[],"published":{"date-parts":[[2019,3]]}}}