{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,4,8]],"date-time":"2026-04-08T20:53:33Z","timestamp":1775681613186,"version":"3.50.1"},"reference-count":55,"publisher":"IEEE","license":[{"start":{"date-parts":[[2019,3,1]],"date-time":"2019-03-01T00:00:00Z","timestamp":1551398400000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2019,3,1]],"date-time":"2019-03-01T00:00:00Z","timestamp":1551398400000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2019,3]]},"DOI":"10.1109\/irps.2019.8720599","type":"proceedings-article","created":{"date-parts":[[2019,5,24]],"date-time":"2019-05-24T00:11:10Z","timestamp":1558656670000},"page":"1-10","source":"Crossref","is-referenced-by-count":16,"title":["Reliability Challenges with Materials for Analog Computing"],"prefix":"10.1109","author":[{"given":"Eduard A.","family":"Cartier","sequence":"first","affiliation":[{"name":"IBM Research Division, T.J. Watson Research Center, Yorktown Heights, NY, USA"}]},{"given":"Wanki","family":"Kim","sequence":"additional","affiliation":[{"name":"IBM Research Division, T.J. Watson Research Center, Yorktown Heights, NY, USA"}]},{"given":"Nanbo","family":"Gong","sequence":"additional","affiliation":[{"name":"IBM Research Division, T.J. Watson Research Center, Yorktown Heights, NY, USA"}]},{"given":"Tayfun","family":"Gokmen","sequence":"additional","affiliation":[{"name":"IBM Research Division, T.J. Watson Research Center, Yorktown Heights, NY, USA"}]},{"given":"Martin M.","family":"Frank","sequence":"additional","affiliation":[{"name":"IBM Research Division, T.J. Watson Research Center, Yorktown Heights, NY, USA"}]},{"given":"Douglas M.","family":"Bishop","sequence":"additional","affiliation":[{"name":"IBM Research Division, T.J. Watson Research Center, Yorktown Heights, NY, USA"}]},{"given":"Youngseok","family":"Kim","sequence":"additional","affiliation":[{"name":"257 Fuller Road, NY, Albany, USA"}]},{"given":"Seyoung","family":"Kim","sequence":"additional","affiliation":[{"name":"IBM Research Division, T.J. Watson Research Center, Yorktown Heights, NY, USA"}]},{"given":"Takashi","family":"Ando","sequence":"additional","affiliation":[{"name":"IBM Research Division, T.J. Watson Research Center, Yorktown Heights, NY, USA"}]},{"given":"Ernest Y.","family":"Wu","sequence":"additional","affiliation":[{"name":"4Essex Junction, VT, USA"}]},{"given":"Praneet","family":"Adusumilli","sequence":"additional","affiliation":[{"name":"IBM Research Division, T.J. Watson Research Center, Yorktown Heights, NY, USA"}]},{"given":"John","family":"Rozen","sequence":"additional","affiliation":[{"name":"IBM Research Division, T.J. Watson Research Center, Yorktown Heights, NY, USA"}]},{"given":"Paul M.","family":"Solomon","sequence":"additional","affiliation":[{"name":"IBM Research Division, T.J. Watson Research Center, Yorktown Heights, NY, USA"}]},{"given":"Wilfried","family":"Haensch","sequence":"additional","affiliation":[{"name":"IBM Research Division, T.J. Watson Research Center, Yorktown Heights, NY, USA"}]},{"given":"Matthew J.","family":"BrightSky","sequence":"additional","affiliation":[{"name":"IBM Research Division, T.J. Watson Research Center, Yorktown Heights, NY, USA"}]},{"given":"Abu","family":"Sebastian","sequence":"additional","affiliation":[{"name":"Zurich, Ruschlikon, 8803, Switzerland"}]},{"given":"Geoffrey W.","family":"Burr","sequence":"additional","affiliation":[{"name":"Almaden, San Jose, CA, USA"}]},{"given":"Vijay","family":"Narayanan","sequence":"additional","affiliation":[{"name":"IBM Research Division, T.J. Watson Research Center, Yorktown Heights, NY, USA"}]}],"member":"263","reference":[{"key":"ref39","doi-asserted-by":"publisher","DOI":"10.23919\/VLSIT.2017.7998165"},{"key":"ref38","doi-asserted-by":"publisher","DOI":"10.1002\/adma.201404531"},{"key":"ref33","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2018.8614664"},{"key":"ref32","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2017.8268436"},{"key":"ref31","doi-asserted-by":"publisher","DOI":"10.1007\/s10825-017-1105-5"},{"key":"ref30","doi-asserted-by":"publisher","DOI":"10.1038\/s41928-017-0006-8"},{"key":"ref37","first-page":"397","article-title":"Ferroelectric materials for memory technology","volume":"4","author":"han","year":"2009","journal-title":"Handbook of Nanoceramics and Their Based Nanodevices"},{"key":"ref36","doi-asserted-by":"crossref","first-page":"386","DOI":"10.1109\/LED.2002.1015207","article-title":"Why is nonvolatile ferroelectric memory field-effect transistor still elusive?","volume":"23","author":"ma","year":"2002","journal-title":"IEEE Electron Device Lett"},{"key":"ref35","doi-asserted-by":"publisher","DOI":"10.1143\/JJAP.32.442"},{"key":"ref34","doi-asserted-by":"publisher","DOI":"10.1038\/s41928-017-0002-z"},{"key":"ref28","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2016.2582859"},{"key":"ref27","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2015.7409620"},{"key":"ref29","doi-asserted-by":"publisher","DOI":"10.1002\/adma.200900375"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1080\/23746149.2016.1259585"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/JPROC.2017.2761740"},{"key":"ref20","doi-asserted-by":"publisher","DOI":"10.1063\/1.3184584"},{"key":"ref22","first-page":"3","article-title":"Crystalline-as-deposited ALD phase change material confined PCM cell for high density storage class memory","author":"brightsky","year":"2015","journal-title":"IEEE International Electron Devices Meeting (IEDM)"},{"key":"ref21","doi-asserted-by":"publisher","DOI":"10.1109\/IMW.2009.5090589"},{"key":"ref24","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS.2018.8353636"},{"key":"ref23","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2016.7838343"},{"key":"ref26","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2018.8614558"},{"key":"ref25","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2004.825805"},{"key":"ref50","article-title":"Analog resistance tuning in TiN\/Hf02\/TiN ferroelectric tunnel junctions","author":"frank","year":"2018","journal-title":"45th IEEE Semiconductor Interface Specialists Conf (SISC)"},{"key":"ref51","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2018.8614551"},{"key":"ref55","article-title":"Time-resolved conductance in electrochemical systems for neuromorphic computing","author":"bishop","year":"2018","journal-title":"International Conference on Solid State Devices and Materials (SSDM)"},{"key":"ref54","doi-asserted-by":"publisher","DOI":"10.1126\/sciadv.aao7233"},{"key":"ref53","doi-asserted-by":"publisher","DOI":"10.1038\/nmat4856"},{"key":"ref52","doi-asserted-by":"publisher","DOI":"10.1002\/adma.201604310"},{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.3389\/fnins.2018.00745"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2014.7047135"},{"key":"ref40","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2017.8268338"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2015.2439635"},{"key":"ref13","first-page":"146","article-title":"Recent progress in phase-change memory technology","volume":"6","author":"burr","year":"2016","journal-title":"IEEE J Emerg Sel Topics Power Electron"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1063\/1.5042413"},{"key":"ref15","first-page":"4","article-title":"Large-scale neural networks implemented with nonvolatile memory as the synaptic weight element: Comparative performance analysis (accuracy, speed, and power)","author":"burr","year":"2015","journal-title":"Electron Devices Meeting (IEDM)"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2013.6724727"},{"key":"ref17","doi-asserted-by":"crossref","first-page":"8181","DOI":"10.1038\/ncomms9181","article-title":"Projected phase-change memory devices","volume":"6","author":"koelmans","year":"2015","journal-title":"Nature Commun"},{"key":"ref18","doi-asserted-by":"publisher","DOI":"10.1109\/PRIME.2017.7974095"},{"key":"ref19","doi-asserted-by":"publisher","DOI":"10.1038\/s41467-018-04485-1"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1038\/s41928-018-0092-2"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2018.8614681"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1038\/s41586-018-0180-5"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/JPROC.2018.2871057"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1016\/S1369-7021(08)70119-6"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.3389\/fnins.2016.00333"},{"key":"ref49","first-page":"148","article-title":"First demonstration and performance improvement of ferroelectric HfO2-based resistive switch with low operation current and intrinsic diode property","author":"fujii","year":"2016","journal-title":"Proc VLSI Tech Symp"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.3389\/fnins.2017.00538"},{"key":"ref46","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2018.2856818"},{"key":"ref45","doi-asserted-by":"publisher","DOI":"10.1109\/NVMTS.2016.7781517"},{"key":"ref48","doi-asserted-by":"publisher","DOI":"10.1038\/nmat3415"},{"key":"ref47","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2013.6724605"},{"key":"ref42","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2016.2588439"},{"key":"ref41","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2016.2593627"},{"key":"ref44","author":"cartier","year":"0"},{"key":"ref43","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2017.2776263"}],"event":{"name":"2019 IEEE International Reliability Physics Symposium (IRPS)","location":"Monterey, CA, USA","start":{"date-parts":[[2019,3,31]]},"end":{"date-parts":[[2019,4,4]]}},"container-title":["2019 IEEE International Reliability Physics Symposium (IRPS)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/8712125\/8720395\/08720599.pdf?arnumber=8720599","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2026,4,8]],"date-time":"2026-04-08T20:03:59Z","timestamp":1775678639000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/8720599\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2019,3]]},"references-count":55,"URL":"https:\/\/doi.org\/10.1109\/irps.2019.8720599","relation":{},"subject":[],"published":{"date-parts":[[2019,3]]}}}