{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,5,16]],"date-time":"2025-05-16T05:47:40Z","timestamp":1747374460085},"reference-count":27,"publisher":"IEEE","license":[{"start":{"date-parts":[[2020,4,1]],"date-time":"2020-04-01T00:00:00Z","timestamp":1585699200000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/ieeexplore.ieee.org\/Xplorehelp\/downloads\/license-information\/IEEE.html"},{"start":{"date-parts":[[2020,4,1]],"date-time":"2020-04-01T00:00:00Z","timestamp":1585699200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2020,4,1]],"date-time":"2020-04-01T00:00:00Z","timestamp":1585699200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2020,4]]},"DOI":"10.1109\/irps45951.2020.9128218","type":"proceedings-article","created":{"date-parts":[[2020,6,30]],"date-time":"2020-06-30T21:20:26Z","timestamp":1593552026000},"page":"1-7","source":"Crossref","is-referenced-by-count":12,"title":["The Influence of Gate Bias on the Anneal of Hot-Carrier Degradation"],"prefix":"10.1109","author":[{"given":"Michiel","family":"Vandemaele","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Kai-Hsin","family":"Chuang","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Erik","family":"Bury","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Stanislav","family":"Tyaginov","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Guido","family":"Groeseneken","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Ben","family":"Kaczer","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2017.2718583"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2017.2787778"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2015.2513744"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2013.2262521"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1063\/1.116308"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1063\/1.373759"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1109\/16.485660"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1109\/TDMR.2007.898085"},{"key":"ref18","doi-asserted-by":"publisher","DOI":"10.1063\/1.3133096"},{"key":"ref19","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS.2014.6861193"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/16.293364"},{"key":"ref27","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.44.1832"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1007\/978-3-642-52314-4_150"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1016\/j.microrel.2018.07.057"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1016\/j.microrel.2017.07.038"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2016.2616133"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1016\/j.microrel.2019.06.010"},{"key":"ref2","first-page":"6f","article-title":"Reliability studies of a 10 nm high-performance and low-power CMOS technology featuring 3rd generation finFET and 5th generation HK\/MG","author":"rahman","year":"2018","journal-title":"In 2018 IEEE International Reliability Physics Symposium (IRPS)"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2017.2700326"},{"key":"ref1","first-page":"2f","article-title":"Transistor aging and reliability in 14 nm tri-gate technology","author":"novak","year":"2015","journal-title":"Reliability Physics Symposium (IRPS) 2015 IEEE International"},{"key":"ref20","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2016.7838524"},{"key":"ref22","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS.2018.8353655"},{"key":"ref21","doi-asserted-by":"publisher","DOI":"10.1109\/MM.2014.2"},{"year":"0","key":"ref24"},{"key":"ref23","doi-asserted-by":"publisher","DOI":"10.1016\/j.mee.2013.09.013"},{"key":"ref26","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.42.3444"},{"key":"ref25","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.38.9657"}],"event":{"name":"2020 IEEE International Reliability Physics Symposium (IRPS)","start":{"date-parts":[[2020,4,28]]},"location":"Dallas, TX, USA","end":{"date-parts":[[2020,5,30]]}},"container-title":["2020 IEEE International Reliability Physics Symposium (IRPS)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/9125439\/9128217\/09128218.pdf?arnumber=9128218","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2022,7,9]],"date-time":"2022-07-09T02:21:13Z","timestamp":1657333273000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/9128218\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2020,4]]},"references-count":27,"URL":"https:\/\/doi.org\/10.1109\/irps45951.2020.9128218","relation":{},"subject":[],"published":{"date-parts":[[2020,4]]}}}