{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,6,6]],"date-time":"2026-06-06T17:03:19Z","timestamp":1780765399839,"version":"3.54.1"},"reference-count":27,"publisher":"IEEE","license":[{"start":{"date-parts":[[2020,4,1]],"date-time":"2020-04-01T00:00:00Z","timestamp":1585699200000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/ieeexplore.ieee.org\/Xplorehelp\/downloads\/license-information\/IEEE.html"},{"start":{"date-parts":[[2020,4,1]],"date-time":"2020-04-01T00:00:00Z","timestamp":1585699200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2020,4,1]],"date-time":"2020-04-01T00:00:00Z","timestamp":1585699200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2020,4]]},"DOI":"10.1109\/irps45951.2020.9128316","type":"proceedings-article","created":{"date-parts":[[2020,6,30]],"date-time":"2020-06-30T21:20:26Z","timestamp":1593552026000},"page":"1-6","source":"Crossref","is-referenced-by-count":62,"title":["Reliability and Variability of Advanced CMOS Devices at Cryogenic Temperatures"],"prefix":"10.1109","author":[{"given":"A.","family":"Grill","sequence":"first","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"E.","family":"Bury","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"J.","family":"Michl","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"S.","family":"Tyaginov","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"D.","family":"Linten","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"T.","family":"Grasser","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"B.","family":"Parvais","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"B.","family":"Kaczer","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"M.","family":"Waltl","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"I.","family":"Radu","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"263","reference":[{"key":"ref10","first-page":"2d5.1","article-title":"Statistical assessment of the full VG\/VDdegradation space using dedicated device arrays","author":"bury","year":"2017","journal-title":"Proc Intl Rel Phys Symp (IRPS)"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS.2018.8353541"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS.2016.7574644"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1109\/55.791929"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1016\/j.sse.2006.05.010"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1109\/55.735747"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1109\/16.557714"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1016\/j.microrel.2017.12.021"},{"key":"ref18","article-title":"Quantum Mechanical Extension of Defect Model to explain BTI at Cryogenic Temperatures","author":"michl","year":"2020","journal-title":"Proc Intl Rel Phys Symp"},{"key":"ref19","doi-asserted-by":"publisher","DOI":"10.1149\/1.3572292"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1103\/RevModPhys.78.217"},{"key":"ref27","first-page":"7.1.1","article-title":"Complete degradation mapping of stacked gate-all-around Si nanowire transistors considering both intrinsic and extrinsic effects","author":"chasin","year":"2018","journal-title":"Proc Intl Electron Devices Meeting (IEDM)"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1063\/1.4939094"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/JEDS.2018.2821763"},{"key":"ref5","article-title":"Revised theoretical limit of the subthreshold swing in field-effect transistors","author":"beckers","year":"2018","journal-title":"arXiv 1811 09146"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1016\/j.cryogenics.2014.04.014"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/JEDS.2018.2817458"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2016.7838410"},{"key":"ref9","first-page":"246","article-title":"Characterization and model validation of mismatch in nanometer CMOS at cryogenic temperatures","author":"t\u2019hart","year":"2018","journal-title":"Proc ESSDERC"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1117\/12.459152"},{"key":"ref20","doi-asserted-by":"publisher","DOI":"10.1109\/EDL.1984.25865"},{"key":"ref22","doi-asserted-by":"publisher","DOI":"10.1049\/el:20080392"},{"key":"ref21","first-page":"312","article-title":"New Understanding of LDD CMOS Hot-Carrier Degradation and Device Lifetime at Cryogenic Temperatures","author":"wang-ratkovic","year":"2003","journal-title":"Proc Intl Rel Phys Symp (IRPS)"},{"key":"ref24","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2011.6131625"},{"key":"ref23","doi-asserted-by":"publisher","DOI":"10.1016\/j.mee.2009.05.013"},{"key":"ref26","doi-asserted-by":"publisher","DOI":"10.1109\/SISPAD.2014.6931570"},{"key":"ref25","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2015.2503920"}],"event":{"name":"2020 IEEE International Reliability Physics Symposium (IRPS)","location":"Dallas, TX, USA","start":{"date-parts":[[2020,4,28]]},"end":{"date-parts":[[2020,5,30]]}},"container-title":["2020 IEEE International Reliability Physics Symposium (IRPS)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/9125439\/9128217\/09128316.pdf?arnumber=9128316","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2022,7,9]],"date-time":"2022-07-09T02:21:13Z","timestamp":1657333273000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/9128316\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2020,4]]},"references-count":27,"URL":"https:\/\/doi.org\/10.1109\/irps45951.2020.9128316","relation":{},"subject":[],"published":{"date-parts":[[2020,4]]}}}