{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,8,13]],"date-time":"2024-08-13T18:17:53Z","timestamp":1723573073665},"reference-count":18,"publisher":"IEEE","license":[{"start":{"date-parts":[[2020,4,1]],"date-time":"2020-04-01T00:00:00Z","timestamp":1585699200000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/ieeexplore.ieee.org\/Xplorehelp\/downloads\/license-information\/IEEE.html"},{"start":{"date-parts":[[2020,4,1]],"date-time":"2020-04-01T00:00:00Z","timestamp":1585699200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2020,4,1]],"date-time":"2020-04-01T00:00:00Z","timestamp":1585699200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2020,4]]},"DOI":"10.1109\/irps45951.2020.9128319","type":"proceedings-article","created":{"date-parts":[[2020,6,30]],"date-time":"2020-06-30T21:20:26Z","timestamp":1593552026000},"source":"Crossref","is-referenced-by-count":4,"title":["Challenges and Peculiarities in Developing New Standards for SiC"],"prefix":"10.1109","author":[{"given":"D. A.","family":"Gajewski","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1016\/j.microrel.2017.11.020"},{"key":"ref11","author":"lichtenwalner","year":"2019","journal-title":"Int Conf Silicon Carbide and Related Materials"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1016\/j.microrel.2017.12.015"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.4028\/www.scientific.net\/MSF.963.753"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2014.2356172"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.4028\/www.scientific.net\/MSF.527-529.141"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.4028\/www.scientific.net\/MSF.963.805"},{"key":"ref17","article-title":"SiC Power Device Reliability","author":"gajewski","year":"2019","journal-title":"Int Integrated Reliability Workshop"},{"key":"ref18","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS.2018.8353544"},{"key":"ref4","year":"2020","journal-title":"Web site"},{"key":"ref3","year":"2020","journal-title":"Web site"},{"key":"ref6","year":"2020","journal-title":"Web site"},{"key":"ref5","year":"2020","journal-title":"JEITA web site"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS.2011.5784573"},{"key":"ref7","article-title":"JEDEC Guidelines and Standards for Compound Semiconductors","author":"gajewski","year":"2019","journal-title":"Compound Semiconductor Manufacturing Technology (CS MANTECH) Conf"},{"key":"ref2","year":"2020","journal-title":"Web site"},{"key":"ref1","author":"desjardins","year":"2017","journal-title":"New JEDEC Committee to Set Standards for Wide Bandgap Power Semiconductors"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS.2018.8353556"}],"event":{"name":"2020 IEEE International Reliability Physics Symposium (IRPS)","location":"Dallas, TX, USA","start":{"date-parts":[[2020,4,28]]},"end":{"date-parts":[[2020,5,30]]}},"container-title":["2020 IEEE International Reliability Physics Symposium (IRPS)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/9125439\/9128217\/09128319.pdf?arnumber=9128319","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2022,7,9]],"date-time":"2022-07-09T02:20:21Z","timestamp":1657333221000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/9128319\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2020,4]]},"references-count":18,"URL":"https:\/\/doi.org\/10.1109\/irps45951.2020.9128319","relation":{},"subject":[],"published":{"date-parts":[[2020,4]]}}}