{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,6,4]],"date-time":"2025-06-04T18:45:15Z","timestamp":1749062715267},"reference-count":14,"publisher":"IEEE","license":[{"start":{"date-parts":[[2020,4,1]],"date-time":"2020-04-01T00:00:00Z","timestamp":1585699200000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/ieeexplore.ieee.org\/Xplorehelp\/downloads\/license-information\/IEEE.html"},{"start":{"date-parts":[[2020,4,1]],"date-time":"2020-04-01T00:00:00Z","timestamp":1585699200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2020,4,1]],"date-time":"2020-04-01T00:00:00Z","timestamp":1585699200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2020,4]]},"DOI":"10.1109\/irps45951.2020.9128328","type":"proceedings-article","created":{"date-parts":[[2020,6,30]],"date-time":"2020-06-30T21:20:26Z","timestamp":1593552026000},"page":"1-6","source":"Crossref","is-referenced-by-count":3,"title":["Conduction and Breakdown Mechanisms in Low-k Spacer and Nitride Spacer Dielectric Stacks in Middle of Line Interconnects"],"prefix":"10.1109","author":[{"given":"C.","family":"Wu","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"A.","family":"Chasin","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"S.","family":"Demuynck","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"N.","family":"Horiguchi","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"K.","family":"Croes","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/IITC.2009.5090389"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1063\/1.4811460"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1063\/1.371590"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS.2009.5173335"},{"key":"ref14","first-page":"388","article-title":"Mechanisms of hydrogen release in the breakdown of SiO2 gate oxides","author":"su\u00f1\u00e9","year":"0","journal-title":"IEEE International Electron Devices Meeting 2005"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2017.8268511"},{"key":"ref3","first-page":"3.7.1","article-title":"A 14nm logic technology featuring 2nd-generation FinFET, air-gapped interconnects, self- aligned double patterning and a 0.0588 µm2 SRAM cell size","author":"natarajan","year":"0","journal-title":"2014 IEEE International Electron Devices Meeting"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS.2013.6531970"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2017.8268316"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS.2017.7936358"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS.2015.7112670"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2012.6478969"},{"key":"ref1","first-page":"131","article-title":"A 22nm high performance and low- power cMOS technology featuring fully-depleted trigate transistors, self-aligned contacts and high density MIM capacitors","author":"auth","year":"0","journal-title":"2012 Symposium on VLSI Technology"},{"key":"ref9","article-title":"Gate\/spacer dielectric stack reliability in local interconnects","author":"wu","year":"0","journal-title":"2019 IEEE International Reliability Physics Symposium"}],"event":{"name":"2020 IEEE International Reliability Physics Symposium (IRPS)","start":{"date-parts":[[2020,4,28]]},"location":"Dallas, TX, USA","end":{"date-parts":[[2020,5,30]]}},"container-title":["2020 IEEE International Reliability Physics Symposium (IRPS)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/9125439\/9128217\/09128328.pdf?arnumber=9128328","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2022,7,9]],"date-time":"2022-07-09T02:19:37Z","timestamp":1657333177000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/9128328\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2020,4]]},"references-count":14,"URL":"https:\/\/doi.org\/10.1109\/irps45951.2020.9128328","relation":{},"subject":[],"published":{"date-parts":[[2020,4]]}}}