{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,10,30]],"date-time":"2024-10-30T06:55:25Z","timestamp":1730271325914,"version":"3.28.0"},"reference-count":18,"publisher":"IEEE","license":[{"start":{"date-parts":[[2020,4,1]],"date-time":"2020-04-01T00:00:00Z","timestamp":1585699200000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/ieeexplore.ieee.org\/Xplorehelp\/downloads\/license-information\/IEEE.html"},{"start":{"date-parts":[[2020,4,1]],"date-time":"2020-04-01T00:00:00Z","timestamp":1585699200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2020,4,1]],"date-time":"2020-04-01T00:00:00Z","timestamp":1585699200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2020,4]]},"DOI":"10.1109\/irps45951.2020.9128965","type":"proceedings-article","created":{"date-parts":[[2020,6,30]],"date-time":"2020-06-30T21:20:26Z","timestamp":1593552026000},"page":"1-6","source":"Crossref","is-referenced-by-count":9,"title":["A Novel \u2018I-V Spectroscopy\u2019 Technique to Deconvolve Threshold Voltage and Mobility Degradation in LDMOS Transistors"],"prefix":"10.1109","author":[{"given":"Yen-Pu","family":"Chen","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Bikram Kishore","family":"Mahajan","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Dhanoop","family":"Varghese","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Srikanth","family":"Krishnan","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Vijay","family":"Reddy","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Muhammad Ashraful","family":"Alam","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1016\/j.sse.2007.09.024"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/EIT.2017.8053350"},{"key":"ref12","first-page":"4","article-title":"Hot carrier Degradation in Classical and Emerging Logic and Power Electronic Devices: Rethinking Reliability for Next Generation Electronics","author":"alam","year":"2020","journal-title":"Electron Device Technology and Manufacturing Conference"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1109\/RELPHY.2006.251239"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1016\/S0026-2714(02)00027-6"},{"journal-title":"version L-2016 03","article-title":"Sentaurus Version L-2016.03","year":"0","key":"ref15"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2012.2227321"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1109\/RELPHY.2007.369940"},{"key":"ref18","doi-asserted-by":"publisher","DOI":"10.1109\/JEDS.2018.2792539"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2019.2941445"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2007.904587"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2011.2160546"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2005.846335"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2011.2177092"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1007\/978-3-7091-6827-1_68"},{"key":"ref2","doi-asserted-by":"crossref","first-page":"238","DOI":"10.1109\/IEDM.1979.189589","article-title":"high voltage thin layer devices (resurf devices)","author":"appels","year":"1979","journal-title":"1979 International Electron Devices Meeting"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/WCT.2004.239969"},{"key":"ref9","first-page":"262","article-title":"An advanced surface-potential-plus MOSFET model","volume":"2","author":"he","year":"2003"}],"event":{"name":"2020 IEEE International Reliability Physics Symposium (IRPS)","start":{"date-parts":[[2020,4,28]]},"location":"Dallas, TX, USA","end":{"date-parts":[[2020,5,30]]}},"container-title":["2020 IEEE International Reliability Physics Symposium (IRPS)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/9125439\/9128217\/09128965.pdf?arnumber=9128965","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2022,7,9]],"date-time":"2022-07-09T02:21:19Z","timestamp":1657333279000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/9128965\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2020,4]]},"references-count":18,"URL":"https:\/\/doi.org\/10.1109\/irps45951.2020.9128965","relation":{},"subject":[],"published":{"date-parts":[[2020,4]]}}}