{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,9,7]],"date-time":"2024-09-07T10:27:04Z","timestamp":1725704824970},"reference-count":13,"publisher":"IEEE","license":[{"start":{"date-parts":[[2020,4,1]],"date-time":"2020-04-01T00:00:00Z","timestamp":1585699200000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/ieeexplore.ieee.org\/Xplorehelp\/downloads\/license-information\/IEEE.html"},{"start":{"date-parts":[[2020,4,1]],"date-time":"2020-04-01T00:00:00Z","timestamp":1585699200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2020,4,1]],"date-time":"2020-04-01T00:00:00Z","timestamp":1585699200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2020,4]]},"DOI":"10.1109\/irps45951.2020.9129112","type":"proceedings-article","created":{"date-parts":[[2020,6,30]],"date-time":"2020-06-30T21:20:26Z","timestamp":1593552026000},"page":"1-5","source":"Crossref","is-referenced-by-count":2,"title":["Full Understanding of Hot Electrons and Hot\/Cold Holes in the Degradation of p-channel Power LDMOS Transistors"],"prefix":"10.1109","author":[{"given":"A. N.","family":"Tallarico","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"S.","family":"Reggiani","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"R.","family":"Depetro","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"G.","family":"Croce","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"E.","family":"Sangiorgi","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"C.","family":"Fiegna","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/JEDS.2018.2792539"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/ESSDERC.2019.8901703"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2012.2227321"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1016\/j.microrel.2017.07.043"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1016\/j.microrel.2014.07.048"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1063\/1.4936161"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/IIRW.2011.6142593"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/ISPSD.2012.6229055"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.23919\/ISPSD.2017.7988955"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS.2012.6241941"},{"journal-title":"Infineon Technologies","article-title":"Selecting P-channel MOSFETs for Switching Applications","year":"2013","key":"ref2"},{"journal-title":"Infineon Technologies","article-title":"How P-Channel MOSFETs Can Simplify Your Circuit","year":"2014","key":"ref1"},{"journal-title":"Sentaurus-Device U G v P-2019 03","year":"2019","key":"ref9"}],"event":{"name":"2020 IEEE International Reliability Physics Symposium (IRPS)","start":{"date-parts":[[2020,4,28]]},"location":"Dallas, TX, USA","end":{"date-parts":[[2020,5,30]]}},"container-title":["2020 IEEE International Reliability Physics Symposium (IRPS)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/9125439\/9128217\/09129112.pdf?arnumber=9129112","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2022,7,9]],"date-time":"2022-07-09T02:20:21Z","timestamp":1657333221000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/9129112\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2020,4]]},"references-count":13,"URL":"https:\/\/doi.org\/10.1109\/irps45951.2020.9129112","relation":{},"subject":[],"published":{"date-parts":[[2020,4]]}}}