{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,9,7]],"date-time":"2024-09-07T04:29:27Z","timestamp":1725683367004},"reference-count":16,"publisher":"IEEE","license":[{"start":{"date-parts":[[2020,4,1]],"date-time":"2020-04-01T00:00:00Z","timestamp":1585699200000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/ieeexplore.ieee.org\/Xplorehelp\/downloads\/license-information\/IEEE.html"},{"start":{"date-parts":[[2020,4,1]],"date-time":"2020-04-01T00:00:00Z","timestamp":1585699200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2020,4,1]],"date-time":"2020-04-01T00:00:00Z","timestamp":1585699200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2020,4]]},"DOI":"10.1109\/irps45951.2020.9129128","type":"proceedings-article","created":{"date-parts":[[2020,6,30]],"date-time":"2020-06-30T21:20:26Z","timestamp":1593552026000},"page":"1-6","source":"Crossref","is-referenced-by-count":3,"title":["Specific aspects regarding evaluation of power cycling tests with SiC devices"],"prefix":"10.1109","author":[{"given":"Martina","family":"Gerlach","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Peter","family":"Seidel","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Josef","family":"Lutz","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"year":"2019","key":"ref10","article-title":"ECPE Guideline AQG 324"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1016\/j.microrel.2015.12.035"},{"key":"ref12","article-title":"Ultra Low (1.25mOhm) On-Restitance 900V SiC 62mm Half-Brigde Poer Modules using new 10 mOhm SiC MOSFETS","author":"casady","year":"2016","journal-title":"PCIM"},{"key":"ref13","article-title":"Reliability of SiC MOSFET with Danfoss Bond Buffer Technology in Automotive Traction Power Modules","author":"streibel","year":"2019","journal-title":"PCIM"},{"key":"ref14","first-page":"868","author":"sze","year":"1981","journal-title":"Physics of Semiconductor Devices"},{"journal-title":"Evaluation of the Vsd-method for temperature estimation during power cycling of SiC-MOSFET IET Power Electronics","year":"2019","author":"hoffmann","key":"ref15"},{"key":"ref16","article-title":"Robustness & Reliability of SiC Devices & Modules","author":"lutz","year":"2019","journal-title":"ECPE Workshop"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS.2017.7936253"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.4028\/www.scientific.net\/MSF.717-720.1175"},{"journal-title":"Semiconductor Power Devices - Physics Characteristics Reliability","year":"2017","author":"lutz","key":"ref6"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/ISPSD.2019.8757598"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/ISPSD.2019.8757661"},{"key":"ref7","article-title":"The New CoolSiC™ Trench MOSFET Technology for Low Gate Oxide Stress and High Performance","author":"peters","year":"2017","journal-title":"PCIM"},{"key":"ref2","first-page":"147","article-title":"Power Cycling Test on 3.3 kV SiC MOSFETs and the Effects of Bipolar Degradation on the Temperature Estimation by V SD -Method","author":"hoffmann","year":"2019","journal-title":"IEEE"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.23919\/ISPSD.2017.7988994"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/ISPSD.2019.8757624"}],"event":{"name":"2020 IEEE International Reliability Physics Symposium (IRPS)","start":{"date-parts":[[2020,4,28]]},"location":"Dallas, TX, USA","end":{"date-parts":[[2020,5,30]]}},"container-title":["2020 IEEE International Reliability Physics Symposium (IRPS)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/9125439\/9128217\/09129128.pdf?arnumber=9129128","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2022,7,9]],"date-time":"2022-07-09T02:19:38Z","timestamp":1657333178000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/9129128\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2020,4]]},"references-count":16,"URL":"https:\/\/doi.org\/10.1109\/irps45951.2020.9129128","relation":{},"subject":[],"published":{"date-parts":[[2020,4]]}}}