{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,1,27]],"date-time":"2026-01-27T13:16:11Z","timestamp":1769519771128,"version":"3.49.0"},"reference-count":19,"publisher":"IEEE","license":[{"start":{"date-parts":[[2020,4,1]],"date-time":"2020-04-01T00:00:00Z","timestamp":1585699200000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/ieeexplore.ieee.org\/Xplorehelp\/downloads\/license-information\/IEEE.html"},{"start":{"date-parts":[[2020,4,1]],"date-time":"2020-04-01T00:00:00Z","timestamp":1585699200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2020,4,1]],"date-time":"2020-04-01T00:00:00Z","timestamp":1585699200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2020,4]]},"DOI":"10.1109\/irps45951.2020.9129232","type":"proceedings-article","created":{"date-parts":[[2020,6,30]],"date-time":"2020-06-30T21:20:26Z","timestamp":1593552026000},"page":"1-6","source":"Crossref","is-referenced-by-count":14,"title":["Influence of high-voltage gate-oxide pulses on the BTI behavior of SiC MOSFETs"],"prefix":"10.1109","author":[{"given":"S.","family":"Maas","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"H.","family":"Reisinger","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"T.","family":"Aichinger","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"G.","family":"Rescher","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1016\/j.microrel.2017.11.020"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1016\/j.microrel.2012.06.007"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1016\/S0026-2714(01)00058-0"},{"key":"ref13","article-title":"Method and apparatus for electrically testing radiation susceptibility of MOS gate devices","author":"mcgarrity","year":"1982","journal-title":"U S Patent 4 323 842"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1063\/1.107081"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2011.2164543"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2013.2264816"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS.2010.5488858"},{"key":"ref18","doi-asserted-by":"publisher","DOI":"10.1016\/j.sse.2004.05.005"},{"key":"ref19","doi-asserted-by":"publisher","DOI":"10.1016\/j.sse.2008.06.034"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1016\/B978-0-08-102094-4.00009-8"},{"key":"ref3","article-title":"Silicon Carbide &#x2013; The next leg of growth in power semiconductors","author":"duval","year":"2018","journal-title":"Goldman Sachs Equity Research"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1016\/j.microrel.2009.06.054"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1016\/0026-2692(93)90107-P"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1088\/0022-3727\/40\/20\/S09"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1063\/1.3530600"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1063\/1.358463"},{"key":"ref1","article-title":"Ultra-low (1.25 m?) On-Resistance 900V SiC 62mm Half-Bridge Power Modules Using New 10m? SiC MOSFETs","author":"casady","year":"2016","journal-title":"Proceedings of PCIM Europe 2016 International Exhibition and Conference for Power Electronics Intelligent Motion Renewable Energy and Energy Management"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1002\/1521-396X(199707)162:1<321::AID-PSSA321>3.0.CO;2-F"}],"event":{"name":"2020 IEEE International Reliability Physics Symposium (IRPS)","location":"Dallas, TX, USA","start":{"date-parts":[[2020,4,28]]},"end":{"date-parts":[[2020,5,30]]}},"container-title":["2020 IEEE International Reliability Physics Symposium (IRPS)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/9125439\/9128217\/09129232.pdf?arnumber=9129232","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2022,7,9]],"date-time":"2022-07-09T02:21:13Z","timestamp":1657333273000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/9129232\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2020,4]]},"references-count":19,"URL":"https:\/\/doi.org\/10.1109\/irps45951.2020.9129232","relation":{},"subject":[],"published":{"date-parts":[[2020,4]]}}}