{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,11,1]],"date-time":"2025-11-01T19:09:29Z","timestamp":1762024169223,"version":"build-2065373602"},"reference-count":32,"publisher":"IEEE","license":[{"start":{"date-parts":[[2020,4,1]],"date-time":"2020-04-01T00:00:00Z","timestamp":1585699200000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/ieeexplore.ieee.org\/Xplorehelp\/downloads\/license-information\/IEEE.html"},{"start":{"date-parts":[[2020,4,1]],"date-time":"2020-04-01T00:00:00Z","timestamp":1585699200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2020,4,1]],"date-time":"2020-04-01T00:00:00Z","timestamp":1585699200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2020,4]]},"DOI":"10.1109\/irps45951.2020.9129322","type":"proceedings-article","created":{"date-parts":[[2020,6,30]],"date-time":"2020-06-30T21:20:26Z","timestamp":1593552026000},"page":"1-6","source":"Crossref","is-referenced-by-count":5,"title":["Short-term reliability of high performance Q-band AlN\/GaN HEMTs"],"prefix":"10.1109","author":[{"given":"R.","family":"Kabouche","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"K.","family":"Harrouche","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"E.","family":"Okada","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"F.","family":"Medjdoub","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"key":"ref32","doi-asserted-by":"publisher","DOI":"10.1109\/LMWC.2017.2678424"},{"key":"ref31","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2015.7409659"},{"key":"ref30","doi-asserted-by":"crossref","first-page":"834","DOI":"10.1109\/LED.2008.2000792","article-title":"55% PAE and high power Ka-band GaN HEMTs with linearized transconductance via n+ GaN source contact ledge","volume":"29","author":"moon","year":"2008","journal-title":"IEEE Electron Device Lett"},{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2014.2367093"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/PAWR.2016.7440153"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1109\/CSICS.2014.6978559"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.23919\/EuMIC.2018.8539962"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1109\/INMMIC.2018.8429994"},{"key":"ref15","first-page":"1","article-title":"GaN HEMTs with pre-match for Ka-band with 18W","author":"takagi","year":"2011","journal-title":"IEEE MTT-S Int Microw Symp Dig"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2011.2168558"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2003.817383"},{"key":"ref18","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2005.1609414"},{"key":"ref19","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2011.6131584"},{"key":"ref28","doi-asserted-by":"publisher","DOI":"10.1143\/APEX.4.064106"},{"key":"ref4","first-page":"30.1.1","article-title":"220GHz fTand 400GHz fmaxin 40-nm GaN DH-HEMTs with re-grown ohmic","author":"shinohara","year":"2010","journal-title":"Tech Dig - Int Electron Devices Meet IEDM"},{"key":"ref27","doi-asserted-by":"publisher","DOI":"10.1016\/j.microrel.2019.06.080"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2015.2421311"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2005.857701"},{"key":"ref29","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2017.2770087"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2009.2034875"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2012.2204855"},{"key":"ref7","doi-asserted-by":"crossref","first-page":"527","DOI":"10.1109\/LED.2014.2313023","article-title":"SiNx\/InAlN\/AlN\/GaN MIS-HEMTs with 10.8 THz•V Johnson figure of merit","volume":"35","author":"downey","year":"2014","journal-title":"IEEE Electron Device Lett"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1002\/pssa.201600797"},{"key":"ref9","first-page":"67","article-title":"W-Band N-Polar GaN MISHEMTs with High Power and Record 27 . 8 % Effic i ency at 94 GHz","author":"romanczyk","year":"2016","journal-title":"Int Electron Device Meet"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1142\/S0129156419400032"},{"key":"ref20","first-page":"627","article-title":"AlGaN\/GaN HEMTs with","author":"kao","year":"2007","journal-title":"Symp A Q J Mod Foreign Lit"},{"key":"ref22","first-page":"237","article-title":"W-band GaN MMIC with 842 mW output power at 88 GHz","author":"micovic","year":"2010","journal-title":"IEEE MTT-S Int Microw Symp Dig"},{"key":"ref21","doi-asserted-by":"publisher","DOI":"10.1109\/CSICS.2005.1531801"},{"key":"ref24","doi-asserted-by":"publisher","DOI":"10.1109\/MWSYM.2004.1338903"},{"key":"ref23","doi-asserted-by":"publisher","DOI":"10.1109\/MWSYM.2006.249737"},{"key":"ref26","doi-asserted-by":"publisher","DOI":"10.1109\/JEDS.2019.2952314"},{"key":"ref25","first-page":"1348","article-title":"A 20-watt Ka-band GaN high power amplifier MMIC","author":"ng","year":"2014","journal-title":"Eur Microw Week 2014 Connect Futur EuMW 2014-Conf Proceedings EuMC 2014 44th Eur Microw Conf"}],"event":{"name":"2020 IEEE International Reliability Physics Symposium (IRPS)","start":{"date-parts":[[2020,4,28]]},"location":"Dallas, TX, USA","end":{"date-parts":[[2020,5,30]]}},"container-title":["2020 IEEE International Reliability Physics Symposium (IRPS)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/9125439\/9128217\/09129322.pdf?arnumber=9129322","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2022,7,9]],"date-time":"2022-07-09T02:21:13Z","timestamp":1657333273000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/9129322\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2020,4]]},"references-count":32,"URL":"https:\/\/doi.org\/10.1109\/irps45951.2020.9129322","relation":{},"subject":[],"published":{"date-parts":[[2020,4]]}}}