{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,10,2]],"date-time":"2025-10-02T05:46:36Z","timestamp":1759383996051,"version":"3.28.0"},"reference-count":22,"publisher":"IEEE","license":[{"start":{"date-parts":[[2020,4,1]],"date-time":"2020-04-01T00:00:00Z","timestamp":1585699200000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/ieeexplore.ieee.org\/Xplorehelp\/downloads\/license-information\/IEEE.html"},{"start":{"date-parts":[[2020,4,1]],"date-time":"2020-04-01T00:00:00Z","timestamp":1585699200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2020,4,1]],"date-time":"2020-04-01T00:00:00Z","timestamp":1585699200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2020,4]]},"DOI":"10.1109\/irps45951.2020.9129596","type":"proceedings-article","created":{"date-parts":[[2020,6,30]],"date-time":"2020-06-30T21:20:26Z","timestamp":1593552026000},"page":"1-8","source":"Crossref","is-referenced-by-count":5,"title":["Sub-nanosecond Reverse Recovery Measurement for ESD Devices"],"prefix":"10.1109","author":[{"given":"Alex","family":"Ayling","sequence":"first","affiliation":[]},{"given":"Shudong","family":"Huang","sequence":"additional","affiliation":[]},{"given":"Elyse","family":"Rosenbaum","sequence":"additional","affiliation":[]}],"member":"263","reference":[{"key":"ref10","article-title":"High current TLP characterisation: an effective tool for the development of semiconductor devices and ESD protection solutions","author":"simburger","year":"2012","journal-title":"ARMMS RF and Microwave Society"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1016\/j.microrel.2011.02.012"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS.2016.7574557"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1109\/RELPHY.2007.369911"},{"journal-title":"Advanced Design System","year":"2015","key":"ref14"},{"key":"ref15","first-page":"67","article-title":"A physics-based compact model for ESD protection diodes under very fast transients","author":"manouvrier","year":"2008","journal-title":"EOS\/ESD 2008 - 2008 30th Electrical Overstress\/Electrostatic Discharge Symposium EOS\/ESD"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1109\/TDMR.2018.2882454"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.23919\/EOS\/ESD.2019.8869987"},{"key":"ref18","first-page":"1","article-title":"Scalable modeling studies on the SCR ESD protection device","author":"romanescu","year":"2011","journal-title":"EOS\/ESD Symposium Proceedings"},{"key":"ref19","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS.2013.6531947"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/TEMC.2006.870681"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/IPFA.2017.8060081"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/TEMC.2018.2815641"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/TEMC.2018.2811713"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/TPEL.2017.2657491"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/APEC.1994.316361"},{"key":"ref2","first-page":"1","article-title":"Anomalous ESD failures in NLDMOS during reverse recovery","author":"hirano","year":"2010","journal-title":"Electrical Overstress\/Electrostatic Discharge Symposium Proceedings 2010"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/RELPHY.2006.251205"},{"key":"ref9","doi-asserted-by":"crossref","first-page":"151","DOI":"10.1109\/T-ED.1971.17167","article-title":"a refined step-recovery technique for measuring minority carrier lifetimes and related parameters in asymmetric p-n junction diodes","volume":"18","author":"dean","year":"1971","journal-title":"IEEE Transactions on Electron Devices"},{"key":"ref20","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2014.2330365"},{"key":"ref22","doi-asserted-by":"crossref","DOI":"10.1109\/PROC.1967.5834","article-title":"Reverse recovery process in silicon power rectifiers","volume":"55","author":"benda","year":"1967","journal-title":"Proceedings of the IEEE"},{"key":"ref21","doi-asserted-by":"publisher","DOI":"10.1109\/63.76804"}],"event":{"name":"2020 IEEE International Reliability Physics Symposium (IRPS)","start":{"date-parts":[[2020,4,28]]},"location":"Dallas, TX, USA","end":{"date-parts":[[2020,5,30]]}},"container-title":["2020 IEEE International Reliability Physics Symposium (IRPS)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/9125439\/9128217\/09129596.pdf?arnumber=9129596","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2022,7,9]],"date-time":"2022-07-09T02:19:38Z","timestamp":1657333178000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/9129596\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2020,4]]},"references-count":22,"URL":"https:\/\/doi.org\/10.1109\/irps45951.2020.9129596","relation":{},"subject":[],"published":{"date-parts":[[2020,4]]}}}