{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,7,27]],"date-time":"2025-07-27T07:45:35Z","timestamp":1753602335218},"reference-count":32,"publisher":"IEEE","license":[{"start":{"date-parts":[[2021,3,1]],"date-time":"2021-03-01T00:00:00Z","timestamp":1614556800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2021,3,1]],"date-time":"2021-03-01T00:00:00Z","timestamp":1614556800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2021,3]]},"DOI":"10.1109\/irps46558.2021.9405139","type":"proceedings-article","created":{"date-parts":[[2021,4,26]],"date-time":"2021-04-26T22:48:05Z","timestamp":1619477285000},"page":"1-8","source":"Crossref","is-referenced-by-count":10,"title":["On the impact of buffer and GaN-channel thickness on current dispersion for GaN-on-Si RF\/mmWave devices"],"prefix":"10.1109","author":[{"given":"V.","family":"Putcha","sequence":"first","affiliation":[{"name":"imec,Heverlee,Belgium"}]},{"given":"L.","family":"Cheng","sequence":"additional","affiliation":[{"name":"Nanjing University,Nanjing,China"}]},{"given":"A.","family":"Alian","sequence":"additional","affiliation":[{"name":"imec,Heverlee,Belgium"}]},{"given":"M.","family":"Zhao","sequence":"additional","affiliation":[{"name":"imec,Heverlee,Belgium"}]},{"given":"H.","family":"Lu","sequence":"additional","affiliation":[{"name":"Nanjing University,Nanjing,China"}]},{"given":"B.","family":"Parvais","sequence":"additional","affiliation":[{"name":"Vrije Universiteit Brussels, Belgium,Dept. ETRO"}]},{"given":"N.","family":"Waldron","sequence":"additional","affiliation":[{"name":"imec,Heverlee,Belgium"}]},{"given":"D.","family":"Linten","sequence":"additional","affiliation":[{"name":"imec,Heverlee,Belgium"}]},{"given":"N.","family":"Collaert","sequence":"additional","affiliation":[{"name":"imec,Heverlee,Belgium"}]}],"member":"263","reference":[{"key":"ref32","doi-asserted-by":"publisher","DOI":"10.1016\/j.microrel.2014.09.013"},{"key":"ref31","doi-asserted-by":"publisher","DOI":"10.1063\/1.1682673"},{"key":"ref30","doi-asserted-by":"publisher","DOI":"10.1109\/ASDAM.2010.5666319"},{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM19573.2019.8993582"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM13553.2020.9372056"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2020.2984727"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2015.7409709"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1109\/JPROC.2002.1021569"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1063\/1.1372160"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1063\/1.4723719"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1109\/ISPSD.2015.7123383"},{"key":"ref18","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2017.2764527"},{"key":"ref19","doi-asserted-by":"publisher","DOI":"10.1063\/1.4944885"},{"key":"ref28","article-title":"The trap locations of GaN HEMT by current transient spectroscopy","author":"chen","year":"0","journal-title":"ROCS (Reliability Of Compound Semiconductors Workshop)"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.3390\/electronics5020028"},{"key":"ref27","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2010.2087339"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2015.7409833"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2015.2428613"},{"key":"ref29","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2013.2279021"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1088\/0268-1242\/31\/9\/093004"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2003.819248"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/LMWC.2019.2933186"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2020.2968757"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/JPROC.2002.1021567"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1063\/1.4868719"},{"key":"ref20","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2020.2980329"},{"key":"ref22","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2018.2864562"},{"key":"ref21","doi-asserted-by":"publisher","DOI":"10.1142\/S0129156419400019"},{"key":"ref24","article-title":"Reliability assessment of A\/GaN\/GaN HEMTs on SiC substrate under RF-stress","author":"moultif","year":"2020","journal-title":"IEEE Transactions on Power Electronics"},{"key":"ref23","doi-asserted-by":"publisher","DOI":"10.1109\/IFEEC47410.2019.9015146"},{"key":"ref26","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS45951.2020.9129251"},{"key":"ref25","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2006.346799"}],"event":{"name":"2021 IEEE International Reliability Physics Symposium (IRPS)","start":{"date-parts":[[2021,3,21]]},"location":"Monterey, CA, USA","end":{"date-parts":[[2021,3,25]]}},"container-title":["2021 IEEE International Reliability Physics Symposium (IRPS)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/9405068\/9405088\/09405139.pdf?arnumber=9405139","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2022,8,2]],"date-time":"2022-08-02T23:46:00Z","timestamp":1659483960000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/9405139\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2021,3]]},"references-count":32,"URL":"https:\/\/doi.org\/10.1109\/irps46558.2021.9405139","relation":{},"subject":[],"published":{"date-parts":[[2021,3]]}}}