{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,3,31]],"date-time":"2026-03-31T13:43:51Z","timestamp":1774964631282,"version":"3.50.1"},"reference-count":19,"publisher":"IEEE","license":[{"start":{"date-parts":[[2021,3,1]],"date-time":"2021-03-01T00:00:00Z","timestamp":1614556800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2021,3,1]],"date-time":"2021-03-01T00:00:00Z","timestamp":1614556800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2021,3]]},"DOI":"10.1109\/irps46558.2021.9405149","type":"proceedings-article","created":{"date-parts":[[2021,4,26]],"date-time":"2021-04-26T18:48:05Z","timestamp":1619462885000},"page":"1-7","source":"Crossref","is-referenced-by-count":4,"title":["Compact Model of ESD Diode Suitable for Subnanosecond Switching Transients"],"prefix":"10.1109","author":[{"given":"Shudong","family":"Huang","sequence":"first","affiliation":[{"name":"University of Illinois at Urbana-Champaign,Department of Electrical and Computer Engineering,Urbana,IL,USA,61801"}]},{"given":"Elyse","family":"Rosenbaum","sequence":"additional","affiliation":[{"name":"University of Illinois at Urbana-Champaign,Department of Electrical and Computer Engineering,Urbana,IL,USA,61801"}]}],"member":"263","reference":[{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS45951.2020.9129596"},{"key":"ref11","author":"tsividis","year":"2011","journal-title":"Operation and Modeling of the MOS Transistor"},{"key":"ref12","article-title":"High current TLP characterisation: an effective tool for the development of semiconductor devices and ESD protection solutions","author":"simburger","year":"2012","journal-title":"ARMMS RF and Microwave Society"},{"key":"ref13","doi-asserted-by":"crossref","first-page":"168","DOI":"10.1109\/LED.2008.2009361","article-title":"Oscillatory transmission line pulsing for characterization of device transient response","volume":"30","author":"di","year":"2009","journal-title":"IEEE Electron Device Letters"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1109\/TPAS.1969.292459"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1109\/16.30944"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1017\/CBO9781139195065"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2010.2058790"},{"key":"ref18","doi-asserted-by":"publisher","DOI":"10.1109\/TDMR.2013.2256910"},{"key":"ref19","doi-asserted-by":"publisher","DOI":"10.23919\/EOS\/ESD.2019.8869987"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/TDMR.2014.2329552"},{"key":"ref3","first-page":"1","article-title":"Effect of flip-chip package parameters on CDM discharge","author":"karp","year":"2008","journal-title":"Electrical Overstress\/Electrostatic Discharge Symposium Proceedings 2008 Tucson AZ"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/RELPHY.2006.251205"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/TDMR.2013.2262606"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/IPFA.2017.8060081"},{"key":"ref7","first-page":"1","article-title":"Anomalous ESD failures in NLDMOS during reverse recovery","author":"hirano","year":"2010","journal-title":"Electrical Overstress\/Electrostatic Discharge Symposium Proceedings 2010 Reno NV"},{"key":"ref2","first-page":"1","article-title":"An investigation of input protection for CDM robustness in 40nm CMOS technology","author":"morishita","year":"2009","journal-title":"Electrical Overstress\/Electrostatic Discharge Symposium Proceedings 2009 Anaheim CA"},{"key":"ref1","first-page":"1","article-title":"Standardization of the Transmission Line Pulse (TLP) Methodology for Electrostatic Discharge (ESD)","author":"steven h voldman","year":"2003","journal-title":"2003 Electrical Overstress\/Electrostatic Discharge Symposium eos\/esd"},{"key":"ref9","first-page":"67","article-title":"A physics-based compact model for ESD protection diodes under very fast transients","author":"manouvrier","year":"2008","journal-title":"Electrical Overstress\/Electrostatic Discharge Symposium Proceedings 2008 Tucson AZ"}],"event":{"name":"2021 IEEE International Reliability Physics Symposium (IRPS)","location":"Monterey, CA, USA","start":{"date-parts":[[2021,3,21]]},"end":{"date-parts":[[2021,3,25]]}},"container-title":["2021 IEEE International Reliability Physics Symposium (IRPS)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/9405068\/9405088\/09405149.pdf?arnumber=9405149","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2022,8,2]],"date-time":"2022-08-02T19:45:56Z","timestamp":1659469556000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/9405149\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2021,3]]},"references-count":19,"URL":"https:\/\/doi.org\/10.1109\/irps46558.2021.9405149","relation":{},"subject":[],"published":{"date-parts":[[2021,3]]}}}