{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,7,22]],"date-time":"2025-07-22T10:37:32Z","timestamp":1753180652198,"version":"3.37.3"},"reference-count":12,"publisher":"IEEE","license":[{"start":{"date-parts":[[2021,3,1]],"date-time":"2021-03-01T00:00:00Z","timestamp":1614556800000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/ieeexplore.ieee.org\/Xplorehelp\/downloads\/license-information\/IEEE.html"},{"start":{"date-parts":[[2021,3,1]],"date-time":"2021-03-01T00:00:00Z","timestamp":1614556800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2021,3,1]],"date-time":"2021-03-01T00:00:00Z","timestamp":1614556800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"funder":[{"DOI":"10.13039\/100000185","name":"DARPA","doi-asserted-by":"publisher","id":[{"id":"10.13039\/100000185","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2021,3]]},"DOI":"10.1109\/irps46558.2021.9405186","type":"proceedings-article","created":{"date-parts":[[2021,4,26]],"date-time":"2021-04-26T22:48:05Z","timestamp":1619477285000},"page":"1-4","source":"Crossref","is-referenced-by-count":4,"title":["Ultrathin Ferroelectricity and Its Application in Advanced Logic and Memory Devices"],"prefix":"10.1109","author":[{"given":"Sayeef","family":"Salahuddin","sequence":"first","affiliation":[]}],"member":"263","reference":[{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1126\/science.1169678"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1021\/nl071804g"},{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1038\/s41586-020-2208-x"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1557\/mrs2008.221"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2019.2912413"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1038\/nnano.2013.192"},{"key":"ref12","first-page":"1","article-title":"Electric field-induced permittivity enhancement in negative-capacitance fet","author":"liao","year":"2021","journal-title":"IEEE Transactions on Electron Devices"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1038\/nature01501"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1557\/mrs2002.71"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/JPROC.2018.2884518"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1063\/1.3634052"},{"journal-title":"Principles and Applications of Ferroelectrics and Related Materials","year":"1977","author":"lines","key":"ref1"}],"event":{"name":"2021 IEEE International Reliability Physics Symposium (IRPS)","start":{"date-parts":[[2021,3,21]]},"location":"Monterey, CA, USA","end":{"date-parts":[[2021,3,25]]}},"container-title":["2021 IEEE International Reliability Physics Symposium (IRPS)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/9405068\/9405088\/09405186.pdf?arnumber=9405186","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2022,7,9]],"date-time":"2022-07-09T02:20:32Z","timestamp":1657333232000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/9405186\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2021,3]]},"references-count":12,"URL":"https:\/\/doi.org\/10.1109\/irps46558.2021.9405186","relation":{},"subject":[],"published":{"date-parts":[[2021,3]]}}}