{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,10,18]],"date-time":"2025-10-18T15:14:02Z","timestamp":1760800442820,"version":"3.28.0"},"reference-count":17,"publisher":"IEEE","license":[{"start":{"date-parts":[[2021,3,1]],"date-time":"2021-03-01T00:00:00Z","timestamp":1614556800000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/ieeexplore.ieee.org\/Xplorehelp\/downloads\/license-information\/IEEE.html"},{"start":{"date-parts":[[2021,3,1]],"date-time":"2021-03-01T00:00:00Z","timestamp":1614556800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2021,3,1]],"date-time":"2021-03-01T00:00:00Z","timestamp":1614556800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2021,3]]},"DOI":"10.1109\/irps46558.2021.9405196","type":"proceedings-article","created":{"date-parts":[[2021,4,26]],"date-time":"2021-04-26T22:48:05Z","timestamp":1619477285000},"page":"1-5","source":"Crossref","is-referenced-by-count":14,"title":["Characterization of Early Breakdown of SiC MOSFET Gate Oxide by Voltage Ramp Tests"],"prefix":"10.1109","author":[{"given":"Yongju","family":"Zheng","sequence":"first","affiliation":[]},{"given":"Rahul","family":"Potera","sequence":"additional","affiliation":[]},{"given":"Tony","family":"Witt","sequence":"additional","affiliation":[]}],"member":"263","reference":[{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1063\/1.1839279"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.7567\/SSDM.2013.M-3-3"},{"key":"ref12","doi-asserted-by":"crossref","first-page":"193","DOI":"10.4028\/www.scientific.net\/MSF.858.193","article-title":"Formation and reduction of large growth pits on 100mm 4° 4H-SiC","volume":"858","author":"sun","year":"2016","journal-title":"Mater Sci Forum"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.4028\/www.scientific.net\/MSF.679-680.378"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1016\/S0026-2714(01)00058-0"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS45951.2020.9129232"},{"key":"ref16","first-page":"78","article-title":"A Charge-to-Breakdown (QBD) Approach to SiC Gate Oxide Lifetime Extraction and Modeling","author":"moens","year":"2020","journal-title":"020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD)"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS45951.2020.9128223"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.4028\/www.scientific.net\/MSF.740-742.745"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/WiPDAAsia.2019.8760324"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2016.2586483"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1016\/j.sse.2004.05.005"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1063\/1.368217"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/16.8802"},{"key":"ref2","article-title":"Silicon Carbide – The next leg of growth in power semiconductors","author":"duval","year":"2018","journal-title":"Goldman Sachs Equity Research"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2014.7046960"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.4028\/www.scientific.net\/MSF.679-680.330"}],"event":{"name":"2021 IEEE International Reliability Physics Symposium (IRPS)","start":{"date-parts":[[2021,3,21]]},"location":"Monterey, CA, USA","end":{"date-parts":[[2021,3,25]]}},"container-title":["2021 IEEE International Reliability Physics Symposium (IRPS)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/9405068\/9405088\/09405196.pdf?arnumber=9405196","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2022,7,9]],"date-time":"2022-07-09T02:20:32Z","timestamp":1657333232000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/9405196\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2021,3]]},"references-count":17,"URL":"https:\/\/doi.org\/10.1109\/irps46558.2021.9405196","relation":{},"subject":[],"published":{"date-parts":[[2021,3]]}}}