{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,2,20]],"date-time":"2026-02-20T15:57:47Z","timestamp":1771603067466,"version":"3.50.1"},"reference-count":13,"publisher":"IEEE","license":[{"start":{"date-parts":[[2021,3,1]],"date-time":"2021-03-01T00:00:00Z","timestamp":1614556800000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/ieeexplore.ieee.org\/Xplorehelp\/downloads\/license-information\/IEEE.html"},{"start":{"date-parts":[[2021,3,1]],"date-time":"2021-03-01T00:00:00Z","timestamp":1614556800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2021,3,1]],"date-time":"2021-03-01T00:00:00Z","timestamp":1614556800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2021,3]]},"DOI":"10.1109\/irps46558.2021.9405216","type":"proceedings-article","created":{"date-parts":[[2021,4,26]],"date-time":"2021-04-26T22:48:05Z","timestamp":1619477285000},"page":"1-5","source":"Crossref","is-referenced-by-count":33,"title":["Scaling Trends in the Soft Error Rate of SRAMs from Planar to 5-nm FinFET"],"prefix":"10.1109","author":[{"given":"B.","family":"Narasimham","sequence":"first","affiliation":[]},{"given":"V.","family":"Chaudhary","sequence":"additional","affiliation":[]},{"given":"M.","family":"Smith","sequence":"additional","affiliation":[]},{"given":"L.","family":"Tsau","sequence":"additional","affiliation":[]},{"given":"D.","family":"Ball","sequence":"additional","affiliation":[]},{"given":"B.","family":"Bhuva","sequence":"additional","affiliation":[]}],"member":"263","reference":[{"key":"ref10","author":"chauhan","year":"2015","journal-title":"FinFET Modeling for IC Simulation and Design"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/ACCESS.2019.2895057"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2015.2464706"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1109\/DRC46940.2019.9046440"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/TNS.2015.2498927"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/TNS.2015.2495130"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS.2018.8353583"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/TDMR.2016.2535663"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/23.903813"},{"key":"ref7","first-page":"238","article-title":"A 16nmMb SRAM in High-K Metal-Gate FinFET Technology with Write-Assist Circuitry for Low-VMIN Applications","author":"chen","year":"0","journal-title":"IEEE Int Solid-State Cir Conf"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS.2015.7112728"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/TNS.2012.2218128"},{"key":"ref9","year":"2013","journal-title":"Synopsys TCAD tools"}],"event":{"name":"2021 IEEE International Reliability Physics Symposium (IRPS)","location":"Monterey, CA, USA","start":{"date-parts":[[2021,3,21]]},"end":{"date-parts":[[2021,3,25]]}},"container-title":["2021 IEEE International Reliability Physics Symposium (IRPS)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/9405068\/9405088\/09405216.pdf?arnumber=9405216","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2022,7,9]],"date-time":"2022-07-09T02:20:32Z","timestamp":1657333232000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/9405216\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2021,3]]},"references-count":13,"URL":"https:\/\/doi.org\/10.1109\/irps46558.2021.9405216","relation":{},"subject":[],"published":{"date-parts":[[2021,3]]}}}