{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,11,15]],"date-time":"2025-11-15T10:28:11Z","timestamp":1763202491353,"version":"3.28.0"},"reference-count":24,"publisher":"IEEE","license":[{"start":{"date-parts":[[2021,3,1]],"date-time":"2021-03-01T00:00:00Z","timestamp":1614556800000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/ieeexplore.ieee.org\/Xplorehelp\/downloads\/license-information\/IEEE.html"},{"start":{"date-parts":[[2021,3,1]],"date-time":"2021-03-01T00:00:00Z","timestamp":1614556800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2021,3,1]],"date-time":"2021-03-01T00:00:00Z","timestamp":1614556800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2021,3]]},"DOI":"10.1109\/irps46558.2021.9405225","type":"proceedings-article","created":{"date-parts":[[2021,4,26]],"date-time":"2021-04-26T22:48:05Z","timestamp":1619477285000},"page":"1-6","source":"Crossref","is-referenced-by-count":11,"title":["Progress and Current Topics of JEDEC JC-70.1 Power GaN Device Quality and Reliability Standards Activity: Or: What is the Avalanche capability of your GaN Transistor?"],"prefix":"10.1109","author":[{"given":"Tim","family":"McDonald","sequence":"first","affiliation":[]},{"given":"Stephanie Watts","family":"Butler","sequence":"additional","affiliation":[]}],"member":"263","reference":[{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS.2016.7574528"},{"journal-title":"IRPS 2019 workshop on GaN\/GaN on Si","year":"0","author":"khalil","key":"ref11"},{"key":"ref12","article-title":"High Voltage GaN Switch Reliability","author":"barr","year":"2018","journal-title":"WiPDA"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1109\/WiPDA.2017.8170500"},{"key":"ref14","article-title":"Reliability and Qualification of CoolGaN™ Technology and Devices","author":"mcdonald","year":"2017","journal-title":"White Paper Infineon Technologies"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS.2019.8720479"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1109\/APEC39645.2020.9124571"},{"year":"0","key":"ref17"},{"journal-title":"Infineon Technologies datasheet for IGT60R190D1S available at","year":"2021","key":"ref18"},{"journal-title":"Transphorm datasheet for TP65H035G4WS","year":"2021","key":"ref19"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS45951.2020.9129324"},{"journal-title":"AN_201611_PL11_002 Infineon Technologies application note accessed","article-title":"Some key facts about avalanche","year":"0","key":"ref3"},{"key":"ref6","first-page":"259","article-title":"UIS withstanding capability and mechanism of high voltage GaN HEMT's","author":"naka","year":"0","journal-title":"Proceedings of the International Symposium on Power Semiconductor Devices and ICs"},{"key":"ref5","article-title":"Single Pulse, Unclamped Inductive Switching Induced Failure and Analysis for 650V p-GaN HEMT","volume":"35","author":"liu","year":"2020","journal-title":"IEEE Transactions on Power Electronics Letters"},{"key":"ref8","first-page":"398","article-title":"Power Semiconductor Devices","year":"1996","journal-title":"B Jayant Baliga PWS Publishing"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/PESC.1988.18196"},{"key":"ref2","article-title":"Power MOSFET Avalanche Design Guidelines","author":"mcdonald","year":"2005","journal-title":"AN-1005 International Rectifier"},{"key":"ref1","article-title":"Status of Wide Bandgap Device Qualification Standards Effort by New JEDEC Committee JC70","author":"butler","year":"2018","journal-title":"APEC"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.3390\/en10020153"},{"year":"2021","key":"ref20"},{"journal-title":"Navitas datasheet for NV6125","year":"2021","key":"ref22"},{"journal-title":"GaNSystems datasheet for GS66516T available","year":"2021","key":"ref21"},{"key":"ref24","article-title":"Update on GaN and SiC Activities Within JEDEC JC-70 Committee","author":"butler","year":"2019","journal-title":"APEC"},{"year":"2036","key":"ref23"}],"event":{"name":"2021 IEEE International Reliability Physics Symposium (IRPS)","start":{"date-parts":[[2021,3,21]]},"location":"Monterey, CA, USA","end":{"date-parts":[[2021,3,25]]}},"container-title":["2021 IEEE International Reliability Physics Symposium (IRPS)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/9405068\/9405088\/09405225.pdf?arnumber=9405225","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2022,7,9]],"date-time":"2022-07-09T02:19:37Z","timestamp":1657333177000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/9405225\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2021,3]]},"references-count":24,"URL":"https:\/\/doi.org\/10.1109\/irps46558.2021.9405225","relation":{},"subject":[],"published":{"date-parts":[[2021,3]]}}}