{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,5,8]],"date-time":"2026-05-08T15:50:14Z","timestamp":1778255414081,"version":"3.51.4"},"reference-count":5,"publisher":"IEEE","license":[{"start":{"date-parts":[[2023,3,1]],"date-time":"2023-03-01T00:00:00Z","timestamp":1677628800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2023,3,1]],"date-time":"2023-03-01T00:00:00Z","timestamp":1677628800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2023,3]]},"DOI":"10.1109\/irps48203.2023.10117625","type":"proceedings-article","created":{"date-parts":[[2023,5,15]],"date-time":"2023-05-15T17:50:57Z","timestamp":1684173057000},"page":"1-4","source":"Crossref","is-referenced-by-count":1,"title":["Voltage Acceleration of Power NLDMOS Hot Carrier Degradation"],"prefix":"10.1109","author":[{"given":"V.A.","family":"Vashchenko","sequence":"first","affiliation":[{"name":"Analog Devices Corp,San Jose,USA"}]},{"given":"H.","family":"Sarbishaei","sequence":"additional","affiliation":[{"name":"Analog Devices Corp,San Jose,USA"}]}],"member":"263","reference":[{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/RELPHY.2003.1197829"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2001.979653"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/RELPHY.2005.1493149"},{"key":"ref2","doi-asserted-by":"crossref","first-page":"909","DOI":"10.1016\/S0026-2714(99)00252-8","article-title":"Dealing with hot-carrier aging in nMOS and DMOS, models, simulations and characterizations","volume":"40","author":"mouthaan","year":"2000","journal-title":"Microelectron Reliability"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/RELPHY.2000.843910"}],"event":{"name":"2023 IEEE International Reliability Physics Symposium (IRPS)","location":"Monterey, CA, USA","start":{"date-parts":[[2023,3,26]]},"end":{"date-parts":[[2023,3,30]]}},"container-title":["2023 IEEE International Reliability Physics Symposium (IRPS)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/10117589\/10117581\/10117625.pdf?arnumber=10117625","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2023,6,12]],"date-time":"2023-06-12T17:49:19Z","timestamp":1686592159000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/10117625\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2023,3]]},"references-count":5,"URL":"https:\/\/doi.org\/10.1109\/irps48203.2023.10117625","relation":{},"subject":[],"published":{"date-parts":[[2023,3]]}}}