{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,6,5]],"date-time":"2026-06-05T16:35:03Z","timestamp":1780677303178,"version":"3.54.1"},"reference-count":41,"publisher":"IEEE","license":[{"start":{"date-parts":[[2023,3,1]],"date-time":"2023-03-01T00:00:00Z","timestamp":1677628800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2023,3,1]],"date-time":"2023-03-01T00:00:00Z","timestamp":1677628800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2023,3]]},"DOI":"10.1109\/irps48203.2023.10117846","type":"proceedings-article","created":{"date-parts":[[2023,5,15]],"date-time":"2023-05-15T17:50:57Z","timestamp":1684173057000},"page":"1-8","source":"Crossref","is-referenced-by-count":24,"title":["Towards a Universal Model of Dielectric Breakdown"],"prefix":"10.1109","author":[{"given":"Andrea","family":"Padovani","sequence":"first","affiliation":[{"name":"University of Modena and Reggio Emilia,Engineering Department “Enzo Ferrari” (DIEF),Modena,MO,Italy,41125"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Paolo La","family":"Torraca","sequence":"additional","affiliation":[{"name":"University of Modena and Reggio Emilia,Department of Sciences and Methods for Engineering (DISMI),Reggio Emilia,RE,Italy,42122"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Jack","family":"Strand","sequence":"additional","affiliation":[{"name":"University of College London,Department of Physics and Astronomy,London,UK,WC1E 6BT"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Alexander","family":"Shluger","sequence":"additional","affiliation":[{"name":"University of College London,Department of Physics and Astronomy,London,UK,WC1E 6BT"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Valerio","family":"Milo","sequence":"additional","affiliation":[{"name":"MDLx Italy | Applied Materials,Reggio Emilia,RE,Italy,42124"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Luca","family":"Larcher","sequence":"additional","affiliation":[{"name":"MDLx Italy | Applied Materials,Reggio Emilia,RE,Italy,42124"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"263","reference":[{"key":"ref13","first-page":"54l","article-title":"Experimental evidence of TBD power-law for voltage dependence of oxide breakdown in ultrathin gate oxides","author":"wu","year":"2000","journal-title":"IEDM Technical Digest"},{"key":"ref35","doi-asserted-by":"publisher","DOI":"10.1063\/1.1398603"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1109\/55.767093"},{"key":"ref34","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.15.989"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1016\/j.microrel.2005.04.004"},{"key":"ref37","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2013.2255104"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS.2014.6861117"},{"key":"ref36","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.15.989"},{"key":"ref31","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2010.2090158"},{"key":"ref30","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2019.2900030"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/EDL.1986.26332"},{"key":"ref33","first-page":"406","article-title":"Theory of light absorption and non-radiative transition in F-centres","volume":"204","author":"huang","year":"1950","journal-title":"Proc R Soc London"},{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/T-ED.1985.21957"},{"key":"ref32","doi-asserted-by":"publisher","DOI":"10.1063\/1.3587452"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1016\/S0026-2714(99)00051-7"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1063\/1.371590"},{"key":"ref17","first-page":"5","article-title":"Role of electron and hole trapping in the degradation and breakdown of SiO2 and Hf02 films","author":"gao","year":"2018","journal-title":"2018 IEEE International Reliability Physics Symposium (IRPS)"},{"key":"ref39","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2013.2251602"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1016\/j.mee.2013.03.027"},{"key":"ref38","first-page":"86","article-title":"Time-dependent dielectric breakdown statistics in SiO2 and Hfo2 dielectrics: Insights from a multi-scale modeling approach","volume":"1","author":"padovani","year":"2018","journal-title":"IEEE International Reliability Physics Symposium Proceedings"},{"key":"ref19","doi-asserted-by":"publisher","DOI":"10.1063\/5.0083189"},{"key":"ref18","doi-asserted-by":"publisher","DOI":"10.1063\/1.4979915"},{"key":"ref24","doi-asserted-by":"publisher","DOI":"10.3389\/fphy.2019.00043"},{"key":"ref23","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevApplied.4.064008"},{"key":"ref26","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2011.2158825"},{"key":"ref25","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.102.014106"},{"key":"ref20","year":"0","journal-title":"Applied Materials Ginestra®"},{"key":"ref41","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2002.805606"},{"key":"ref22","doi-asserted-by":"publisher","DOI":"10.1016\/j.mee.2017.05.005"},{"key":"ref21","doi-asserted-by":"publisher","DOI":"10.1088\/0957-4484\/27\/50\/505207"},{"key":"ref28","doi-asserted-by":"crossref","first-page":"3461","DOI":"10.3390\/ma12213461","article-title":"Multiscale Modeling for Application-Oriented Optimization of Resistive Random-Access Memory","volume":"12","author":"la torraca","year":"2019","journal-title":"Materials"},{"key":"ref27","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2013.2275182"},{"key":"ref29","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS48227.2022.9764451"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1063\/1.1565180"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1063\/1.368217"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2003.815141"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1016\/j.microrel.2012.06.007"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1007\/978-3-662-09432-7_6"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2018.8614490"},{"key":"ref5","doi-asserted-by":"crossref","first-page":"408","DOI":"10.1109\/LED.2004.828570","article-title":"High-k\/Metal-Gate Stack and Its MOSFET Characteristics","volume":"25","author":"chau","year":"2004","journal-title":"IEEE Electron Device Lett"},{"key":"ref40","doi-asserted-by":"publisher","DOI":"10.1109\/55.847381"}],"event":{"name":"2023 IEEE International Reliability Physics Symposium (IRPS)","location":"Monterey, CA, USA","start":{"date-parts":[[2023,3,26]]},"end":{"date-parts":[[2023,3,30]]}},"container-title":["2023 IEEE International Reliability Physics Symposium (IRPS)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/10117589\/10117581\/10117846.pdf?arnumber=10117846","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2023,6,26]],"date-time":"2023-06-26T17:50:36Z","timestamp":1687801836000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/10117846\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2023,3]]},"references-count":41,"URL":"https:\/\/doi.org\/10.1109\/irps48203.2023.10117846","relation":{},"subject":[],"published":{"date-parts":[[2023,3]]}}}