{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,5,8]],"date-time":"2026-05-08T16:14:51Z","timestamp":1778256891184,"version":"3.51.4"},"reference-count":7,"publisher":"IEEE","license":[{"start":{"date-parts":[[2023,3,1]],"date-time":"2023-03-01T00:00:00Z","timestamp":1677628800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2023,3,1]],"date-time":"2023-03-01T00:00:00Z","timestamp":1677628800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2023,3]]},"DOI":"10.1109\/irps48203.2023.10118083","type":"proceedings-article","created":{"date-parts":[[2023,5,15]],"date-time":"2023-05-15T13:50:57Z","timestamp":1684158657000},"page":"1-7","source":"Crossref","is-referenced-by-count":4,"title":["Comprehensive Analysis of Hole-Trapping in SiN Films with a Wide Range of Time Constants Based on Dynamic C-V"],"prefix":"10.1109","author":[{"given":"Harumi","family":"Seki","sequence":"first","affiliation":[{"name":"Institute of Memory Technology R&#x0026;D Kioxia Corporation,Yokohama,Japan"}]},{"given":"Reika","family":"Ichihara","sequence":"additional","affiliation":[{"name":"Institute of Memory Technology R&#x0026;D Kioxia Corporation,Yokohama,Japan"}]},{"given":"Yusuke","family":"Higashi","sequence":"additional","affiliation":[{"name":"Institute of Memory Technology R&#x0026;D Kioxia Corporation,Yokohama,Japan"}]},{"given":"Yasushi","family":"Nakasaki","sequence":"additional","affiliation":[{"name":"Institute of Memory Technology R&#x0026;D Kioxia Corporation,Yokohama,Japan"}]},{"given":"Masumi","family":"Saitoh","sequence":"additional","affiliation":[{"name":"Institute of Memory Technology R&#x0026;D Kioxia Corporation,Yokohama,Japan"}]},{"given":"Masamichi","family":"Suzuki","sequence":"additional","affiliation":[{"name":"Institute of Memory Technology R&#x0026;D Kioxia Corporation,Yokohama,Japan"}]}],"member":"263","reference":[{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/JEDS.2019.2920024"},{"key":"ref4","article-title":"Ultra-fast CV methods (< 10&#x00B5;s) for interface trap spectroscopy and BTI reliability characterization using MOS capacitors","volume":"3a","author":"frutuoso","year":"2022","journal-title":"Proc IEEE International Reliability Physics Symposium (IRPS)"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM19574.2021.9720516"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS45951.2020.9128224"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1143\/JJAP.49.04DD06"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM19573.2019.8993664"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2020.3028349"}],"event":{"name":"2023 IEEE International Reliability Physics Symposium (IRPS)","location":"Monterey, CA, USA","start":{"date-parts":[[2023,3,26]]},"end":{"date-parts":[[2023,3,30]]}},"container-title":["2023 IEEE International Reliability Physics Symposium (IRPS)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/10117589\/10117581\/10118083.pdf?arnumber=10118083","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2023,6,12]],"date-time":"2023-06-12T13:49:32Z","timestamp":1686577772000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/10118083\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2023,3]]},"references-count":7,"URL":"https:\/\/doi.org\/10.1109\/irps48203.2023.10118083","relation":{},"subject":[],"published":{"date-parts":[[2023,3]]}}}