{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,12,19]],"date-time":"2025-12-19T09:58:47Z","timestamp":1766138327177},"reference-count":39,"publisher":"IEEE","license":[{"start":{"date-parts":[[2023,3,1]],"date-time":"2023-03-01T00:00:00Z","timestamp":1677628800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2023,3,1]],"date-time":"2023-03-01T00:00:00Z","timestamp":1677628800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2023,3]]},"DOI":"10.1109\/irps48203.2023.10118084","type":"proceedings-article","created":{"date-parts":[[2023,5,15]],"date-time":"2023-05-15T13:50:57Z","timestamp":1684158657000},"page":"1-6","source":"Crossref","is-referenced-by-count":4,"title":["Industrial approach to the chip and package reliability of SiC MOSFETs (Invited)"],"prefix":"10.1109","author":[{"given":"Elena","family":"Mengotti","sequence":"first","affiliation":[{"name":"ABB Switzerland Ltd., Corporate Research Center,Baden-Dattwil,Switzerland,5405"}]},{"given":"Enea","family":"Bianda","sequence":"additional","affiliation":[{"name":"ABB Switzerland Ltd., Corporate Research Center,Baden-Dattwil,Switzerland,5405"}]},{"given":"David","family":"Baumann","sequence":"additional","affiliation":[{"name":"ABB Switzerland Ltd., Corporate Research Center,Baden-Dattwil,Switzerland,5405"}]},{"given":"Gerd","family":"Schlottig","sequence":"additional","affiliation":[{"name":"ABB Switzerland Ltd., Corporate Research Center,Baden-Dattwil,Switzerland,5405"}]},{"given":"Francisco","family":"Canales","sequence":"additional","affiliation":[{"name":"ABB Switzerland Ltd., Corporate Research Center,Baden-Dattwil,Switzerland,5405"}]}],"member":"263","reference":[{"volume-title":"JEDEC: global Standard for the Microelectronics Industry","key":"ref1"},{"volume-title":"JEITA","key":"ref2"},{"volume-title":"ECPE guideline PSRRA.01 Railway Applications HV-H3TRB tests for Power Semiconductor","year":"2019","key":"ref3"},{"volume-title":"ECPE Guideline AQG 324, Qualification of Power Modules for Use in Power Electronics Converter Units in Motor Vehicles","year":"2019","key":"ref4"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS45951.2020.9128319"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/TPEL.2016.2621099"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/ICPET55165.2022.9918509"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/IECON.2019.8927774"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS46558.2021.9405183"},{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1016\/j.microrel.2007.07.031"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/ISPSD.2016.7520779"},{"volume-title":"JEP190, Guideline for Evaluating dv\/dt Robustness of SiC Power Devices","year":"2022","key":"ref12"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1109\/CORNEL.1997.649363"},{"key":"ref14","first-page":"1","article-title":"Breakdown of Gate Oxide of SiC-MOSFETs and Si-IGBTs under High Temperature and High Gate Voltage","author":"Beier-Moebius","year":"2017","journal-title":"PCIM Europe"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.4028\/www.scientific.net\/msf.1004.1033"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS46558.2021.9405207"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS45951.2020.9128227"},{"key":"ref18","first-page":"1","article-title":"Qualifying a Silicon Carbide Power Module: Reliability Testing Beyond the Standards of Silicon Devices","volume-title":"CIPS 2022; 12th International Conference on Integrated Power Electronics Systems","author":"Salmen"},{"key":"ref19","doi-asserted-by":"publisher","DOI":"10.1109\/IIRW.2016.7904895"},{"key":"ref20","doi-asserted-by":"publisher","DOI":"10.1109\/WiPDA49284.2021.9645100"},{"key":"ref21","doi-asserted-by":"publisher","DOI":"10.1109\/ESARS-ITEC.2018.8607547"},{"key":"ref22","doi-asserted-by":"publisher","DOI":"10.23919\/ISPSD50666.2021.9452290"},{"volume-title":"JEP183A Revision of JEP183, Guidelines for Measuring the Threshold Voltage (VT) of SiC MOSFETs","year":"2023","key":"ref23"},{"key":"ref24","doi-asserted-by":"publisher","DOI":"10.30420\/565822040"},{"volume-title":"JESD22-Al08D, Temperature, Bias and Operating Life","year":"2010","key":"ref25"},{"key":"ref26","first-page":"1","article-title":"High Humidity, High Temperature and High Voltage Reverse Bias - A Relevant Test for Industrial Applications","author":"Jormanainen","year":"2018","journal-title":"PCIM Europe"},{"key":"ref27","article-title":"Qualifying a Silicon Carbide Power Module: Reliability Testing Beyond the Standards of Silicon Devices","author":"Salmen","year":"2022","journal-title":"CIPS"},{"key":"ref28","article-title":"Reliability and Ruggedness of SiC Trench MOSFETs for Long-Term Applications in Humid Environment","author":"Voss","year":"2018","journal-title":"PCIM Europe"},{"key":"ref29","article-title":"Model for Power Cycling lifetime of IGBT Modules - various factors influencing lifetime","author":"Bayerer","year":"2008","journal-title":"CIPS"},{"key":"ref30","doi-asserted-by":"publisher","DOI":"10.23919\/EPE20ECCEEurope43536.2020.9215609"},{"key":"ref31","article-title":"Power cycling capability for Modules with SiC diodes","author":"Herold","year":"2014","journal-title":"CIPS"},{"key":"ref32","doi-asserted-by":"publisher","DOI":"10.1109\/WiPDA.2014.6964616"},{"key":"ref33","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS.2019.8720578"},{"key":"ref34","doi-asserted-by":"publisher","DOI":"10.4028\/www.scientific.net\/MSF.924.805"},{"key":"ref35","doi-asserted-by":"publisher","DOI":"10.1109\/JESTPE.2019.2947645"},{"key":"ref36","doi-asserted-by":"publisher","DOI":"10.30420\/565822085"},{"key":"ref37","doi-asserted-by":"publisher","DOI":"10.30420\/565822078"},{"key":"ref38","article-title":"High-Power SiC and Si Module Platform for Automotive Traction Inverter","author":"Schuderer","year":"2019","journal-title":"PCIM Europe"},{"key":"ref39","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS48227.2022.9764498"}],"event":{"name":"2023 IEEE International Reliability Physics Symposium (IRPS)","start":{"date-parts":[[2023,3,26]]},"location":"Monterey, CA, USA","end":{"date-parts":[[2023,3,30]]}},"container-title":["2023 IEEE International Reliability Physics Symposium (IRPS)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/10117589\/10117581\/10118084.pdf?arnumber=10118084","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2024,1,11]],"date-time":"2024-01-11T21:19:18Z","timestamp":1705007958000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/10118084\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2023,3]]},"references-count":39,"URL":"https:\/\/doi.org\/10.1109\/irps48203.2023.10118084","relation":{},"subject":[],"published":{"date-parts":[[2023,3]]}}}