{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,8,2]],"date-time":"2025-08-02T16:59:30Z","timestamp":1754153970172,"version":"3.41.2"},"reference-count":20,"publisher":"IEEE","license":[{"start":{"date-parts":[[2023,3,1]],"date-time":"2023-03-01T00:00:00Z","timestamp":1677628800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2023,3,1]],"date-time":"2023-03-01T00:00:00Z","timestamp":1677628800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2023,3]]},"DOI":"10.1109\/irps48203.2023.10118152","type":"proceedings-article","created":{"date-parts":[[2023,5,15]],"date-time":"2023-05-15T13:50:57Z","timestamp":1684158657000},"page":"1-5","source":"Crossref","is-referenced-by-count":1,"title":["Comprehensive study on prediction of endurance properties from breakdown voltage in high-reliable STT-MRAM"],"prefix":"10.1109","author":[{"given":"H.","family":"Sato","sequence":"first","affiliation":[{"name":"Samsung Electronics Co.,R&D Center,Hwaseong-si,Korea"}]},{"given":"H. M.","family":"Shin","sequence":"additional","affiliation":[{"name":"Samsung Electronics Co.,R&D Center,Hwaseong-si,Korea"}]},{"given":"H.","family":"Jung","sequence":"additional","affiliation":[{"name":"Samsung Electronics Co.,R&D Center,Hwaseong-si,Korea"}]},{"given":"S. W.","family":"Lee","sequence":"additional","affiliation":[{"name":"Samsung Electronics Co.,R&D Center,Hwaseong-si,Korea"}]},{"given":"H.","family":"Bae","sequence":"additional","affiliation":[{"name":"Samsung Electronics Co.,R&D Center,Hwaseong-si,Korea"}]},{"given":"H.","family":"Kwon","sequence":"additional","affiliation":[{"name":"Samsung Electronics Co.,R&D Center,Hwaseong-si,Korea"}]},{"given":"K. H.","family":"Ryu","sequence":"additional","affiliation":[{"name":"Samsung Electronics Co.,R&D Center,Hwaseong-si,Korea"}]},{"given":"W. C.","family":"Lim","sequence":"additional","affiliation":[{"name":"Samsung Electronics Co.,R&D Center,Hwaseong-si,Korea"}]},{"given":"Y. S.","family":"Han","sequence":"additional","affiliation":[{"name":"Samsung Electronics Co.,R&D Center,Hwaseong-si,Korea"}]},{"given":"J. H.","family":"Jeong","sequence":"additional","affiliation":[{"name":"Samsung Electronics Co.,R&D Center,Hwaseong-si,Korea"}]},{"given":"J. M","family":"Lee","sequence":"additional","affiliation":[{"name":"Samsung Electronics Co.,R&D Center,Hwaseong-si,Korea"}]},{"given":"D. S.","family":"Kim","sequence":"additional","affiliation":[{"name":"Samsung Electronics Co.,R&D Center,Hwaseong-si,Korea"}]},{"given":"K.","family":"Lee","sequence":"additional","affiliation":[{"name":"Samsung Electronics Co.,R&D Center,Hwaseong-si,Korea"}]},{"given":"J. H.","family":"Lee","sequence":"additional","affiliation":[{"name":"Samsung Electronics Co.,R&D Center,Hwaseong-si,Korea"}]},{"given":"J. H.","family":"Park","sequence":"additional","affiliation":[{"name":"Samsung Electronics Co.,R&D Center,Hwaseong-si,Korea"}]},{"given":"Y. J.","family":"Song","sequence":"additional","affiliation":[{"name":"Samsung Electronics Co.,R&D Center,Hwaseong-si,Korea"}]},{"given":"Y.","family":"Ji","sequence":"additional","affiliation":[{"name":"Samsung Electronics Co.,Foundry Business,Yongin-Si,Korea"}]},{"given":"B. I.","family":"Seo","sequence":"additional","affiliation":[{"name":"Samsung Electronics Co.,Foundry Business,Yongin-Si,Korea"}]},{"given":"J.W.","family":"Kim","sequence":"additional","affiliation":[{"name":"Samsung Electronics Co.,Foundry Business,Yongin-Si,Korea"}]},{"given":"H. H.","family":"Kim","sequence":"additional","affiliation":[{"name":"Samsung Electronics Co.,Foundry Business,Yongin-Si,Korea"}]}],"member":"263","reference":[{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS.2018.8353678"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS.2017.7936318"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS.1979.362863"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1007\/978-1-4419-6348-2"},{"key":"ref20","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS.1986.362105"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS.2015.7112818"},{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS.2019.8720435"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2018.8614620"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2018.8614635"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS.1981.362997"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS.1979.362864"},{"key":"ref19","doi-asserted-by":"publisher","DOI":"10.1149\/1.2114251"},{"key":"ref18","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS.1985.362066"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2017.2731959"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM19574.2021.9720537"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS.2019.8720429"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM19573.2019.8993469"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2018.8614566"},{"key":"ref6","first-page":"t2?5","article-title":"3D stacked CIS compatible 40nm embedded STT-MRAM for buffer memory","author":"oka","year":"2021","journal-title":"IEEE Symposium on VLSI Technology"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM19573.2019.8993474"}],"event":{"name":"2023 IEEE International Reliability Physics Symposium (IRPS)","start":{"date-parts":[[2023,3,26]]},"location":"Monterey, CA, USA","end":{"date-parts":[[2023,3,30]]}},"container-title":["2023 IEEE International Reliability Physics Symposium (IRPS)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/10117589\/10117581\/10118152.pdf?arnumber=10118152","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,7,23]],"date-time":"2025-07-23T18:30:56Z","timestamp":1753295456000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/10118152\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2023,3]]},"references-count":20,"URL":"https:\/\/doi.org\/10.1109\/irps48203.2023.10118152","relation":{},"subject":[],"published":{"date-parts":[[2023,3]]}}}