{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,10,30]],"date-time":"2024-10-30T06:56:42Z","timestamp":1730271402699,"version":"3.28.0"},"reference-count":18,"publisher":"IEEE","license":[{"start":{"date-parts":[[2023,3,1]],"date-time":"2023-03-01T00:00:00Z","timestamp":1677628800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2023,3,1]],"date-time":"2023-03-01T00:00:00Z","timestamp":1677628800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2023,3]]},"DOI":"10.1109\/irps48203.2023.10118271","type":"proceedings-article","created":{"date-parts":[[2023,5,15]],"date-time":"2023-05-15T17:50:57Z","timestamp":1684173057000},"page":"1-6","source":"Crossref","is-referenced-by-count":0,"title":["TCAD study of the Holding-Voltage Modulation in Irradiated SCR-LDMOS for HV ESD Protection"],"prefix":"10.1109","author":[{"given":"Laura","family":"Zunarelli","sequence":"first","affiliation":[{"name":"ARCES and Department of Electronic Engineering Guglielmo Marconi,Bologna,Italy,40136"}]},{"given":"Luigi","family":"Balestra","sequence":"additional","affiliation":[{"name":"ARCES and Department of Electronic Engineering Guglielmo Marconi,Bologna,Italy,40136"}]},{"given":"Susanna","family":"Reggiani","sequence":"additional","affiliation":[{"name":"ARCES and Department of Electronic Engineering Guglielmo Marconi,Bologna,Italy,40136"}]},{"given":"Raj","family":"Sankaralingam","sequence":"additional","affiliation":[{"name":"Texas Instruments,Dallas,TX,75243"}]},{"given":"Mariano","family":"Dissegna","sequence":"additional","affiliation":[{"name":"Texas Instruments,Dallas,TX,75243"}]},{"given":"Gianluca","family":"Boselli","sequence":"additional","affiliation":[{"name":"Texas Instruments,Dallas,TX,75243"}]}],"member":"263","reference":[{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1016\/S0026-2692(03)00194-0"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1063\/1.331460"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1002\/0470846054"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1109\/SISPAD.2011.6035081"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2016.2638476"},{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1049\/PBPO152E_ch3"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS.2010.5488786"},{"key":"ref1","doi-asserted-by":"crossref","first-page":"14007","DOI":"10.1088\/1674-4926\/34\/1\/014007","article-title":"A novel latch-up free SCR-LDMOS with high holding voltage for a power-rail ESD clamp","volume":"34","author":"hongwei","year":"2013","journal-title":"J Semicond"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS48227.2022.9764432"},{"journal-title":"Synopsys Sentaurus Device User Guide","year":"0","key":"ref16"},{"key":"ref18","doi-asserted-by":"publisher","DOI":"10.1016\/0038-1101(94)90116-3"},{"key":"ref8","first-page":"1","article-title":"High-Performance bi-directional SCR developed on a 0. 13um SOI-based smart power technology for automotive applications","author":"zhan","year":"2017","journal-title":"2017 39th Electrical Overstress\/Electrostatic Discharge Symposium (EOS\/ESD)"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2021.3131536"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1049\/el.2020.0748"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/RELPHY.2008.4558856"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/TDMR.2012.2220358"},{"key":"ref6","first-page":"72","article-title":"A Holding Voltage Adjustment Technique of SCR for ESD Protection","author":"xiaozong","year":"2017","journal-title":"The 3rd Int Conf on Intelligent Energy and Power Systems (IEPS)"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2013.2272591"}],"event":{"name":"2023 IEEE International Reliability Physics Symposium (IRPS)","start":{"date-parts":[[2023,3,26]]},"location":"Monterey, CA, USA","end":{"date-parts":[[2023,3,30]]}},"container-title":["2023 IEEE International Reliability Physics Symposium (IRPS)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/10117589\/10117581\/10118271.pdf?arnumber=10118271","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2023,6,12]],"date-time":"2023-06-12T17:49:33Z","timestamp":1686592173000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/10118271\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2023,3]]},"references-count":18,"URL":"https:\/\/doi.org\/10.1109\/irps48203.2023.10118271","relation":{},"subject":[],"published":{"date-parts":[[2023,3]]}}}